Lab for Surface Modification

Equipment/facility: Facility

  • Location

    United States

Equipments Details

Description

The Laboratory for Surface Modification (LSM) at Rutgers is a truly multidisciplinary endeavor, which provides a focus for research in basic and applied studies of high technology surfaces and interfaces. LSM brings together over 20 faculty in different departments (Physics and Astronomy, Chemistry and Chemical Biology, Materials Science and Engineering, Electrical and Computer Engineering, Chemical and Biochemical Engineering, Biomedical Engineering). In addition, there are over 50 visiting scientists, postdoctoral fellows and graduate students involved in various research projects.

Facilities:
Helium Ion Microscopy (HIM)
- Imaging of surfaces using helium ions with great depth-of-view and without conducting metallic coatings.
- Micromachining of nm-scale features.

XPS (X-Ray Photoelectron Spectroscopy) Facility
- Advanced surface, interface and thin film analysis and consultation services to academy and industry.
- Training in XPS and related surface analytical techniques

1.7 MV Ion Beam Analysis Facility
- Determination the structure and chemical composition of very thin (1-100 nm) films of technological materials.
- Thin films are bombarded with energetic ions, and the energy of the backscattered ions are measured (Rutherford Backscattering Spectroscopy, RBS).
- Hydrogen detection using recoil scatterings.
- Several beamlines are used for different experiments.

Medium-Energy Ion Scattering (MEIS)
- Determination of structural and compositional properties of surfaces and ultrathin films.
- Energy and angle resolved detection of backscattered ions provides surface structural and compositional information. The ions are created and accelerated in a 400 keV ion implanter.

Atomic Layer Deposition
- Allows layer by layer growth of ultra thin films (highly conformal deposition technique), based on self-terminating surface chemical reactions.
- In-situ Infrared Absorption Spectroscopy using FTIR available.
- Ideal for mechanistic studies of growth of metal and metal oxide films.
- Current substrates include silicon, germanium, gallium arsenide.

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