• 2919 Citations
  • 30 h-Index
1987 …2018

Research output per year

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Research Output

2018

Glide of basal plane dislocations during 150 mm 4H-SiC epitaxial growth by a hot-wall reactor

Feng, G., Qian, W. N., Sun, Y. Q., Chen, Z. & Zhao, J. H., Jan 1 2018, Silicon Carbide and Related Materials, 2017. Stahlbush, R., Neudeck, P., Bhalla, A., Devaty, R. P., Dudley, M. & Lelis, A. (eds.). Trans Tech Publications Ltd, p. 80-83 4 p. (Materials Science Forum; vol. 924 MSF).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Growth of 150 mm 4H-SiC epitaxial layer by a hot-wall reactor

Sun, Y. Q., Feng, G., Kang, J. Y., Qian, W. N., Li, Y. Y., Li, K. X. & Zhao, J. H., Jan 1 2018, Silicon Carbide and Related Materials, 2017. Stahlbush, R., Neudeck, P., Bhalla, A., Devaty, R. P., Dudley, M. & Lelis, A. (eds.). Trans Tech Publications Ltd, p. 76-79 4 p. (Materials Science Forum; vol. 924 MSF).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016

Elimination of BPD in 5~30um thick 4H-SiC epitaxial layers grown in a warm-wall planetary reactor

Feng, G., Sun, Y. Q., Qian, W. N., Lv, L. P., Zhao, J. H., Tsai, D., Raghunathan, M. & Fei, Y., Jan 1 2016, Silicon Carbide and Related Materials 2015. Roccaforte, F., Giannazzo, F., La Via, F., Nipoti, R., Crippa, D. & Saggio, M. (eds.). Trans Tech Publications Ltd, p. 189-192 4 p. (Materials Science Forum; vol. 858).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Formation and reduction of large growth pits on 100 mm 4° 4H-SiC

Sun, Y. Q., Feng, G., Kang, J. Y., Qian, W. N., Lv, L. P., Li, Y. Y., Li, K. X. & Zhao, J. H., Jan 1 2016, Silicon Carbide and Related Materials 2015. Roccaforte, F., Giannazzo, F., La Via, F., Nipoti, R., Crippa, D. & Saggio, M. (eds.). Trans Tech Publications Ltd, p. 193-196 4 p. (Materials Science Forum; vol. 858).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2013
14 Scopus citations
2012

Design of an integrated SiC JFET power switch and flyback diode

Radhakrishnan, R. & Zhao, J. H., Jan 1 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 1041-1044 4 p. (Materials Science Forum; vol. 717-720).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fabrication and characterization of 4H-SiC 6kV gate turn-off thyristor

Lin, L. & Zhao, J. H., Jan 1 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 1163-1166 4 p. (Materials Science Forum; vol. 717-720).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Influence of anode layout on the performance of SiC JBS diodes

Radhakrishnan, R. & Zhao, J. H., Jan 1 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 937-940 4 p. (Materials Science Forum; vol. 717-720).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

SiC solid-state disconnect for high power system applications

Li, X., Alexandrov, P., Fursin, L., Dries, C. & Zhao, J. H., Jan 1 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 1249-1252 4 p. (Materials Science Forum; vol. 717-720).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2011

A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes

Radhakrishnan, R. & Zhao, J. H., Sep 1 2011, In : Solid-State Electronics. 63, 1, p. 167-176 10 p.

Rutgers, The State University

Research output: Contribution to journalArticle

11 Scopus citations

High voltage 4H-SiC BJTs with deep mesa edge termination

Zhang, J., Zhao, J. H., Wang, X., Li, X., Fursin, L., Alexandrov, P., Gagliardi, M. A., Lange, M. & Dries, C., Jan 1 2011, Silicon Carbide and Related Materials 2010. Monakhov, E. V., Hornos, T. & Svensson, B. G. (eds.). Trans Tech Publications Ltd, p. 710-713 4 p. (Materials Science Forum; vol. 679-680).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Monolithic integration of a 4H-silicon carbide vertical JFET and a JBS diode

Radhakrishnan, R. & Zhao, J. H., Jun 1 2011, In : IEEE Electron Device Letters. 32, 6, p. 785-787 3 p., 5756451.

Rutgers, The State University

Research output: Contribution to journalArticle

6 Scopus citations

Optically triggered power switch based on 4H-SiC vertical JFET

Alexandrov, P., Li, X. & Zhao, J. H., Jan 1 2011, Silicon Carbide and Related Materials 2010. Monakhov, E. V., Hornos, T. & Svensson, B. G. (eds.). Trans Tech Publications Ltd, p. 625-628 4 p. (Materials Science Forum; vol. 679-680).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Proton irradiation of 4H-SiC ultraviolet single photon avalanche diodes

Gaskill, D. K., Hu, J., Xin, X., Zhao, J. H., VanMil, B. L., Myers-Ward, R. L. & Eddy, C. R., Jan 1 2011, Silicon Carbide and Related Materials 2010. Monakhov, E. V., Hornos, T. & Svensson, B. G. (eds.). Trans Tech Publications Ltd, p. 551-554 4 p. (Materials Science Forum; vol. 679-680).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Proton irradiation of ultraviolet 4H-SiC single photon avalanche diodes

Hu, J., Xin, X., Zhao, J. H., Vanmil, B. L., Myers-Ward, R., Eddy, C. R. & Gaskill, D. K., Dec 1 2011, In : IEEE Transactions on Nuclear Science. 58, 6 PART 2, p. 3343-3347 5 p., 6093712.

Rutgers, The State University

Research output: Contribution to journalArticle

8 Scopus citations

Solid-state disconnects based on SiC power JFETs

Alexandrov, P., Li, X., Fursin, L., Dries, C., Zhao, J. & Burke, T., Nov 7 2011, 2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011. 6043095. (2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2010

Combined Raman scattering and TEM studies on polytype transformation in SiC from heavily nitrogen doping

Chen, J., Lien, S. C., Feng, Z. C., Kuan, C. H., Horng, R. H., Zhao, J. H. & Lu, W., Dec 14 2010, XXII International Conference on Raman Spectroscopy, ICORS 2010. p. 1139-1140 2 p. (AIP Conference Proceedings; vol. 1267).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Reply to comments on "1.88-mΩ · cm2 1650-V normally on 4H-SiC TI-VJFET"

Li, Y., Alexandrov, P. & Zhao, J. H., Dec 1 2010, In : IEEE Transactions on Electron Devices. 57, 12, p. 3543-3547 5 p., 5607303.

Rutgers, The State University

Research output: Contribution to journalReview article

2009

1600 V, 5, 1mΩ·cm24H-SiC BJT with a high current gain of β=70

Zhang, J., Alexandrov, P. & Zhao, J. H., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 1155-1158 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

4H-SiC bipolar junction transistors with graded base doping profile

Zhang, J., Fursin, L., Li, X., Wang, X., Zhao, J. H., Vanmil, B. L., Myers-Ward, R. L., Eddy, C. R. & Gaskill, D. K., Jan 1 2009, Silicon Carbide and Related Materials 2008: ECSCRM 2008. Trans Tech Publications Ltd, p. 829-832 4 p. (Materials Science Forum; vol. 615 617).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

4H-SiC LJFET-based power IC using depletion load

Su, M., Sheng, K., Zhao, J. & Li, X., Dec 1 2009, 2009 International Semiconductor Device Research Symposium, ISDRS '09. 5378114. (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4H-SiC single photon avalanche diode for 280nm UV applications

Hu, J., Xin, X., Alexandrov, P., Zhao, J. H., Van Mil, B. L., Gaskill, D. K., Lew, K. K., Myers-Ward, R. & Eddy, C. R., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, Vol. 600-603. p. 1203-1206 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

5 kV, 9.5 A SiC JBS diodes with non-uniform guard ring edge termination for high power switching application

Hu, J., Li, L. X., Alexandrov, P., Wang, X. & Zhao, J. H., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 947-950 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

A vertical SiC JFET with a monolithically integrated JBS diode

Sheng, K., Radhakrishnan, R., Zhang, Y. & Zhao, J., Dec 1 2009, ISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's. p. 255-258 4 p. 5158050. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Design of high temperature SiC LJFET-based logic inverter and integrated gate driver

Sheng, K., Zhang, Y., Yu, L., Su, M. & Zhao, J., Dec 1 2009, 2009 IEEE 6th International Power Electronics and Motion Control Conference, IPEMC '09. p. 302-306 5 p. 5157403

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Development of high temperature lateral HV and LV JFETs in 4H-SiC

Zhang, Y., Sheng, K., Su, M., Zhao, J. H., Alexandrov, P. & Fursin, L., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, Vol. 600-603. p. 1091-1094 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High-frequency switching of SiC high-voltage LJFET

Sheng, K., Zhang, Y., Yu, L., Su, M. & Zhao, J. H., Mar 11 2009, In : IEEE Transactions on Power Electronics. 24, 1, p. 271-277 7 p.

Rutgers, The State University

Research output: Contribution to journalArticle

22 Scopus citations

Material properties of GaN films grown on SiC/SOI substrate

Feng, Z. C., Tran, C., Ferguson, I. T. & Zhao, J. H., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 1313-1316 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Occurrence of polytype transformation during nitrogen doping of SiC bulk wafer

Chen, J., Lien, S. C., Shin, Y. C., Feng, Z. C., Kuan, C. H., Zhao, J. H. & Lu, W. J., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 39-42 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Rheology and thermal conductivity of diamond powder-filled liquid epoxy encapsulants for electronic packaging

Zhang, Y., Hu, X., Zhao, J. H., Sheng, K., Cannon, W. R., Wang, X. & Fursin, L., Dec 1 2009, In : IEEE Transactions on Components and Packaging Technologies. 32, 4, p. 716-723 8 p., 5290024.

Rutgers, The State University

Research output: Contribution to journalArticle

32 Scopus citations
2008

1.88-mΩ · cm2 1650-V normally on 4H-SiC TI-VJFET

Li, Y., Alexandrov, P. & Zhao, J. H., Aug 18 2008, In : IEEE Transactions on Electron Devices. 55, 8, p. 1880-1886 7 p.

Rutgers, The State University

Research output: Contribution to journalArticle

39 Scopus citations

1 × 16 Pt/4H-SiC Schottky photodiode array for low-level EUV and UV spectroscopic detection

Hu, J., Xin, X., Joseph, C. L., Li, X. & Zhao, J., Dec 15 2008, In : IEEE Photonics Technology Letters. 20, 24, p. 2030-2032 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

1 Scopus citations

4H-SiC visible-blind single-photon avalanche diode for ultraviolet detection at 280 and 350 nm

Hu, J., Xin, X., Li, X., Zhao, J., VanMil, B. L., Lew, K. K., Myers-Ward, R. L., Eddy, C. R. & Gaskill, D. K., Aug 18 2008, In : IEEE Transactions on Electron Devices. 55, 8, p. 1977-1983 7 p.

Rutgers, The State University

Research output: Contribution to journalArticle

24 Scopus citations

Current status and future prospects of SiC power JFETs and ICs

Zhao, J. H., Sheng, K., Zhang, Y. & Su, M., Jul 2008, In : IEICE Transactions on Electronics. E91-C, 7, p. 1031-1041 11 p.

Rutgers, The State University

Research output: Contribution to journalArticle

3 Scopus citations

Demonstration of the first SiC power integrated circuit

Sheng, K., Zhang, Y., Su, M., Zhao, J., Li, X., Alexandrov, P. & Fursin, L., Oct 1 2008, In : Solid-State Electronics. 52, 10, p. 1636-1646 11 p.

Rutgers, The State University

Research output: Contribution to journalArticle

17 Scopus citations

Development of 4H-SiC LJFET-based power IC

Zhang, Y., Sheng, K., Su, M., Zhao, J. H., Alexandrov, P., Li, X., Fursin, L. & Weiner, M., Aug 18 2008, In : IEEE Transactions on Electron Devices. 55, 8, p. 1934-1945 12 p.

Rutgers, The State University

Research output: Contribution to journalArticle

17 Scopus citations

Fabrication and characterization of high-current-gain 4H-SiC bipolar junction transistors

Zhang, J., Li, X., Alexandrov, P., Fursin, L., Wang, X. & Zhao, J. H., Aug 18 2008, In : IEEE Transactions on Electron Devices. 55, 8, p. 1899-1906 8 p.

Rutgers, The State University

Research output: Contribution to journalArticle

44 Scopus citations

High frequency switching of SiC high voltage LJFET

Sheng, K., Zhang, Y., Su, M., Yu, L. & Zhao, J., Sep 17 2008, ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's. p. 229-232 4 p. 4538940. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Implantation-free 4H-SiC bipolar junction transistors with double base epilayers

Zhang, J., Li, X., Alexandrov, P., Burke, T. & Zhao, J. H., May 1 2008, In : IEEE Electron Device Letters. 29, 5, p. 471-473 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

19 Scopus citations

Modeling and design of a monolithically integrated power converter on SiC

Yu, L. C., Sheng, K. & Zhao, J. H., Oct 1 2008, In : Solid-State Electronics. 52, 10, p. 1625-1630 6 p.

Rutgers, The State University

Research output: Contribution to journalArticle

3 Scopus citations

Normally-off 4H-SiC trench-gate MOSFETs with high mobility

Wu, J., Hu, J., Zhao, J., Wang, X., Li, X., Fursin, L. & Burke, T., Jun 1 2008, In : Solid-State Electronics. 52, 6, p. 909-913 5 p.

Rutgers, The State University

Research output: Contribution to journalArticle

7 Scopus citations

Special issue on silicon carbide devices and technology

Zhao, J., Pensl, G., Kimoto, T., Matsunami, M., Kosugi, H., Cooper, J. A. & Weiner, M., Aug 18 2008, In : IEEE Transactions on Electron Devices. 55, 8, p. 1795-1797 3 p.

Rutgers, The State University

Research output: Contribution to journalEditorial

6 Scopus citations

Structural and Optical Studies on Ion-implanted 6H-SiC Thin Films

Feng, Z. C., Lien, S. C., Zhao, J., Sun, X. W. & Lu, W., Jun 30 2008, In : Thin Solid Films. 516, 16, p. 5217-5222 6 p.

Rutgers, The State University

Research output: Contribution to journalArticle

17 Scopus citations
2007

1000-V 9.1-mΩ · cm2 normally off 4H-SiC lateral RESURF JFET for power integrated circuit applications

Zhang, Y., Sheng, K., Su, M., Zhao, J. H., Alexandrov, P. & Fursin, L., May 1 2007, In : IEEE Electron Device Letters. 28, 5, p. 404-407 4 p.

Rutgers, The State University

Research output: Contribution to journalArticle

24 Scopus citations

Demonstration of the first power IC on 4H-SiC

Zhao, J. H., Zhang, Y., Su, M., Sheng, K., Alexandrov, P. & Fursin, L., Dec 1 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422416. (2007 International Semiconductor Device Research Symposium, ISDRS).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

High performance 4H-SiC single photon avalanche diode operating at solar blind wavelength

Xin, X., Hu, J., Alexandov, P., Zhao, J. H., VanMil, B. L., Gaskill, D. K., Lew, K. K., Myers-Ward, R. & Eddy, C., Dec 1 2007, Advanced Photon Counting Techniques II. 677114. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 6771).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Modeling and design of a monolithically integrated power converter on SiC

Yu, L. C., Sheng, K. & Zhao, J. H., Dec 1 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422381. (2007 International Semiconductor Device Research Symposium, ISDRS).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2006

10kV, 87mΩcm2 normally-off 4H-SiC vertical junction field-effect transistors

Li, Y., Alexandrov, P., Zhang, J., Li, L. X. & Zhao, J. H., Jan 1 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1187-1190 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

1836 V, 4.7 mΩ-cm2 high power 4H-SiC bipolar junction transistor

Zhang, J., Wu, J., Alexandrov, P., Burke, T., Sheng, K. & Zhao, J. H., Jan 1 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1417-1420 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

4.3 kV 4H-SiC merged PiN/Schottky diodes

Wu, J., Fursin, L., Li, Y., Alexandrov, P., Weiner, M. & Zhao, J., Jul 1 2006, In : Semiconductor Science and Technology. 21, 7, p. 987-991 5 p., 027.

Rutgers, The State University

Research output: Contribution to journalArticle

7 Scopus citations