• 2919 Citations
  • 30 h-Index
1987 …2018

Research output per year

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2018

Glide of basal plane dislocations during 150 mm 4H-SiC epitaxial growth by a hot-wall reactor

Feng, G., Qian, W. N., Sun, Y. Q., Chen, Z. & Zhao, J. H., Jan 1 2018, Silicon Carbide and Related Materials, 2017. Stahlbush, R., Neudeck, P., Bhalla, A., Devaty, R. P., Dudley, M. & Lelis, A. (eds.). Trans Tech Publications Ltd, p. 80-83 4 p. (Materials Science Forum; vol. 924 MSF).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Growth of 150 mm 4H-SiC epitaxial layer by a hot-wall reactor

Sun, Y. Q., Feng, G., Kang, J. Y., Qian, W. N., Li, Y. Y., Li, K. X. & Zhao, J. H., Jan 1 2018, Silicon Carbide and Related Materials, 2017. Stahlbush, R., Neudeck, P., Bhalla, A., Devaty, R. P., Dudley, M. & Lelis, A. (eds.). Trans Tech Publications Ltd, p. 76-79 4 p. (Materials Science Forum; vol. 924 MSF).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016

Elimination of BPD in 5~30um thick 4H-SiC epitaxial layers grown in a warm-wall planetary reactor

Feng, G., Sun, Y. Q., Qian, W. N., Lv, L. P., Zhao, J. H., Tsai, D., Raghunathan, M. & Fei, Y., Jan 1 2016, Silicon Carbide and Related Materials 2015. Roccaforte, F., Giannazzo, F., La Via, F., Nipoti, R., Crippa, D. & Saggio, M. (eds.). Trans Tech Publications Ltd, p. 189-192 4 p. (Materials Science Forum; vol. 858).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Formation and reduction of large growth pits on 100 mm 4° 4H-SiC

Sun, Y. Q., Feng, G., Kang, J. Y., Qian, W. N., Lv, L. P., Li, Y. Y., Li, K. X. & Zhao, J. H., Jan 1 2016, Silicon Carbide and Related Materials 2015. Roccaforte, F., Giannazzo, F., La Via, F., Nipoti, R., Crippa, D. & Saggio, M. (eds.). Trans Tech Publications Ltd, p. 193-196 4 p. (Materials Science Forum; vol. 858).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2012

Design of an integrated SiC JFET power switch and flyback diode

Radhakrishnan, R. & Zhao, J. H., Jan 1 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 1041-1044 4 p. (Materials Science Forum; vol. 717-720).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fabrication and characterization of 4H-SiC 6kV gate turn-off thyristor

Lin, L. & Zhao, J. H., Jan 1 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 1163-1166 4 p. (Materials Science Forum; vol. 717-720).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Influence of anode layout on the performance of SiC JBS diodes

Radhakrishnan, R. & Zhao, J. H., Jan 1 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 937-940 4 p. (Materials Science Forum; vol. 717-720).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

SiC solid-state disconnect for high power system applications

Li, X., Alexandrov, P., Fursin, L., Dries, C. & Zhao, J. H., Jan 1 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. Devaty, R. P., Dudley, M., Chow, T. P. & Neudeck, P. G. (eds.). Trans Tech Publications Ltd, p. 1249-1252 4 p. (Materials Science Forum; vol. 717-720).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2011

High voltage 4H-SiC BJTs with deep mesa edge termination

Zhang, J., Zhao, J. H., Wang, X., Li, X., Fursin, L., Alexandrov, P., Gagliardi, M. A., Lange, M. & Dries, C., Jan 1 2011, Silicon Carbide and Related Materials 2010. Monakhov, E. V., Hornos, T. & Svensson, B. G. (eds.). Trans Tech Publications Ltd, p. 710-713 4 p. (Materials Science Forum; vol. 679-680).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optically triggered power switch based on 4H-SiC vertical JFET

Alexandrov, P., Li, X. & Zhao, J. H., Jan 1 2011, Silicon Carbide and Related Materials 2010. Monakhov, E. V., Hornos, T. & Svensson, B. G. (eds.). Trans Tech Publications Ltd, p. 625-628 4 p. (Materials Science Forum; vol. 679-680).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Proton irradiation of 4H-SiC ultraviolet single photon avalanche diodes

Gaskill, D. K., Hu, J., Xin, X., Zhao, J. H., VanMil, B. L., Myers-Ward, R. L. & Eddy, C. R., Jan 1 2011, Silicon Carbide and Related Materials 2010. Monakhov, E. V., Hornos, T. & Svensson, B. G. (eds.). Trans Tech Publications Ltd, p. 551-554 4 p. (Materials Science Forum; vol. 679-680).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Solid-state disconnects based on SiC power JFETs

Alexandrov, P., Li, X., Fursin, L., Dries, C., Zhao, J. & Burke, T., Nov 7 2011, 2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011. 6043095. (2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2010

Combined Raman scattering and TEM studies on polytype transformation in SiC from heavily nitrogen doping

Chen, J., Lien, S. C., Feng, Z. C., Kuan, C. H., Horng, R. H., Zhao, J. H. & Lu, W., Dec 14 2010, XXII International Conference on Raman Spectroscopy, ICORS 2010. p. 1139-1140 2 p. (AIP Conference Proceedings; vol. 1267).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2009

1600 V, 5, 1mΩ·cm24H-SiC BJT with a high current gain of β=70

Zhang, J., Alexandrov, P. & Zhao, J. H., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 1155-1158 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

4H-SiC bipolar junction transistors with graded base doping profile

Zhang, J., Fursin, L., Li, X., Wang, X., Zhao, J. H., Vanmil, B. L., Myers-Ward, R. L., Eddy, C. R. & Gaskill, D. K., Jan 1 2009, Silicon Carbide and Related Materials 2008: ECSCRM 2008. Trans Tech Publications Ltd, p. 829-832 4 p. (Materials Science Forum; vol. 615 617).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

4H-SiC LJFET-based power IC using depletion load

Su, M., Sheng, K., Zhao, J. & Li, X., Dec 1 2009, 2009 International Semiconductor Device Research Symposium, ISDRS '09. 5378114. (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4H-SiC single photon avalanche diode for 280nm UV applications

Hu, J., Xin, X., Alexandrov, P., Zhao, J. H., Van Mil, B. L., Gaskill, D. K., Lew, K. K., Myers-Ward, R. & Eddy, C. R., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, Vol. 600-603. p. 1203-1206 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

5 kV, 9.5 A SiC JBS diodes with non-uniform guard ring edge termination for high power switching application

Hu, J., Li, L. X., Alexandrov, P., Wang, X. & Zhao, J. H., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 947-950 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

A vertical SiC JFET with a monolithically integrated JBS diode

Sheng, K., Radhakrishnan, R., Zhang, Y. & Zhao, J., Dec 1 2009, ISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's. p. 255-258 4 p. 5158050. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Design of high temperature SiC LJFET-based logic inverter and integrated gate driver

Sheng, K., Zhang, Y., Yu, L., Su, M. & Zhao, J., Dec 1 2009, 2009 IEEE 6th International Power Electronics and Motion Control Conference, IPEMC '09. p. 302-306 5 p. 5157403

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Development of high temperature lateral HV and LV JFETs in 4H-SiC

Zhang, Y., Sheng, K., Su, M., Zhao, J. H., Alexandrov, P. & Fursin, L., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, Vol. 600-603. p. 1091-1094 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Material properties of GaN films grown on SiC/SOI substrate

Feng, Z. C., Tran, C., Ferguson, I. T. & Zhao, J. H., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 1313-1316 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Occurrence of polytype transformation during nitrogen doping of SiC bulk wafer

Chen, J., Lien, S. C., Shin, Y. C., Feng, Z. C., Kuan, C. H., Zhao, J. H. & Lu, W. J., Jan 1 2009, Silicon Carbide and Related Materials 2007. Suzuki, A., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Fuyuki, T. (eds.). Trans Tech Publications Ltd, p. 39-42 4 p. (Materials Science Forum; vol. 600-603).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations
2008

High frequency switching of SiC high voltage LJFET

Sheng, K., Zhang, Y., Su, M., Yu, L. & Zhao, J., Sep 17 2008, ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's. p. 229-232 4 p. 4538940. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2007

Demonstration of the first power IC on 4H-SiC

Zhao, J. H., Zhang, Y., Su, M., Sheng, K., Alexandrov, P. & Fursin, L., Dec 1 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422416. (2007 International Semiconductor Device Research Symposium, ISDRS).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

High performance 4H-SiC single photon avalanche diode operating at solar blind wavelength

Xin, X., Hu, J., Alexandov, P., Zhao, J. H., VanMil, B. L., Gaskill, D. K., Lew, K. K., Myers-Ward, R. & Eddy, C., Dec 1 2007, Advanced Photon Counting Techniques II. 677114. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 6771).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Modeling and design of a monolithically integrated power converter on SiC

Yu, L. C., Sheng, K. & Zhao, J. H., Dec 1 2007, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422381. (2007 International Semiconductor Device Research Symposium, ISDRS).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2006

10kV, 87mΩcm2 normally-off 4H-SiC vertical junction field-effect transistors

Li, Y., Alexandrov, P., Zhang, J., Li, L. X. & Zhao, J. H., Jan 1 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1187-1190 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

1836 V, 4.7 mΩ-cm2 high power 4H-SiC bipolar junction transistor

Zhang, J., Wu, J., Alexandrov, P., Burke, T., Sheng, K. & Zhao, J. H., Jan 1 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1417-1420 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Demonstration of high-voltage 4H-SiC bipolar RF power limiter

Su, M., Xin, X., Li, L. X. & Zhao, J. H., Jan 1 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1371-1374 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Design, fabrication and application of 4H-SiC trenched-and-Lmplanted vertical JFETs

Zhao, J. H., Alexandrov, P., Li, Y., Li, L., Sheng, K. & Lebron-Velilla, R., Jan 1 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1191-1194 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Development of ultra high sensitivity UV silicon carbide detectors

Yan, F., Xin, X., Alexandrov, P., Stahle, C. M., Guan, B. & Zhao, J. H., Jan 1 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Trans Tech Publications Ltd, p. 1461-1464 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations
2005

Characterization and application of SiC TI-VJFETs

Sheng, K., Lee, J. H., Alexandrov, P. & Zhao, J., Dec 1 2005, 2005 International Semiconductor Device Research Symposium. p. 296-297 2 p. 1596102. (2005 International Semiconductor Device Research Symposium; vol. 2005).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Characterization of normally-off SiC vertical JFET devices and inverter circuits

Lai, J. S., Yu, H., Zhang, J., Alexandrov, P., Li, Y., Zhao, J., Sheng, K. & Hefner, A., Dec 1 2005, Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting. p. 404-409 6 p. 1518340. (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society); vol. 1).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Effect of graded base doping on the gain of SiC BJT

Zhao, J., Zhang, J., Li, X. & Sheng, K., Dec 1 2005, 2005 International Semiconductor Device Research Symposium. p. 398-399 2 p. 1596154. (2005 International Semiconductor Device Research Symposium; vol. 2005).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

High temperature characterization of SiC BJTs for power switching applications

Sheng, K., Yu, L. C., Zhang, J. & Zhao, J., Dec 1 2005, 2005 International Semiconductor Device Research Symposium. Vol. 2005. p. 168-169 2 p. 1596035

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations
2004

A high performance 4H-SiC normally-off VJFET

Zhao, J., Tone, K., Sheng, K., Li, X., Alexandrov, P., Fursin, L., Weiner, M. & Burke, T., Dec 1 2004, Conference Proceedings - IPEMC 2004: 4th International Power Electronics and Motion Control Conference. Wang, Z. (ed.). p. 342-346 5 p. (Conference Proceedings - IPEMC 2004: 4th International Power Electronics and Motion Control Conference; vol. 1).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2003

Fabrication and characterization of high current gain ((β=430) and high power (23 A-500 V) 4H-SiC darlington bipolar transistors

Luo, Y., Zhang, J., Alexandrov, P., Fursin, L. & Zhao, J., Jan 1 2003, 61st Device Research Conference, DRC 2003 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 1 p. 1226855. (Device Research Conference - Conference Digest, DRC; vol. 2003-January).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations
2002

4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW

Alexandrov, P., Wright, B., Pan, M., Weiner, M., Fursin, L. & Zhao, J. H., Jan 1 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1177-1180 4 p. (Materials Science Forum; vol. 389-393).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

All-SiC inductively-loaded half-bridge inverter characterization of 4H-SiC power BJTs up to 400V/22 A

Luo, Y., Fursin, L., Zhao, J. H., Alexandrov, P., Wright, B. & Weiner, M., Jan 1 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1325-1328 4 p. (Materials Science Forum; vol. 389-393).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

A novel, planar 3,000 V normally-off field gated bipolar transistor in 4H-SiC

Li, X., Fursin, L., Zhao, J. H., Alexandrov, P., Pan, M., Weiner, M., Burke, T. & Khalil, G., Jan 1 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1345-1348 4 p. (Materials Science Forum; vol. 389-393).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

A novel high-voltage normally-off 4H-SiC vertical JFET

Zhao, J. H., Li, X., Tone, K., Alexandrov, P., Pan, M. & Weiner, M., Jan 1 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1223-1226 4 p. (Materials Science Forum; vol. 389-393).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

A novel technology for the formation of a very small bevel angle for edge termination

Yan, F., Qin, C., Zhao, J. H. & Weiner, M., Jan 1 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1305-1308 4 p. (Materials Science Forum; vol. 389-393).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Scopus citations

Demonstration of 4H-SiC avalanche photodiode linear array

Yan, F., Qin, C., Zhao, J. H., Bush, M. & Olsen, G. H., Jan 1 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1431-1434 4 p. (Materials Science Forum; vol. 389-393).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

On the temperature coefficient of 4H-SiC npn transistor current gain

Li, X., Luo, Y., Zhao, J. H., Alexandrov, P., Pan, M. & Weiner, M., Jan 1 2002, Silicon Carbide and Related Materials 2001. Yoshida, S., Nishino, S., Harima, H. & Kimoto, T. (eds.). Trans Tech Publications Ltd, p. 1333-1336 4 p. (Materials Science Forum; vol. 389-393).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2001

4H-SiC BJT and Darlington switch for power inverter applications

Li, X., Luo, Y., Fursin, L., Zhao, J. H., Pan, M., Alexandrov, P. & Weiner, M., Jan 1 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 9-12 4 p. 984426. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

A novel high power bipolar transistor in 4H-SiC

Zhao, J., Li, X., Fursin, L., Alexandrov, P., Pan, M., Weiner, M., Burke, T. & Khalil, G., Jan 1 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 231-234 4 p. 984483. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Avalanche breakdown of 4H-SiC diodes with edge terminated by a 2° positive bevel

Yan, F., Qin, C. & Zhao, J. H., Jan 1 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 216-219 4 p. 984479. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Demonstration of a 140 A, 800 V, fast recover 4H-SiC P-i-N/Schottky barrier (MPS) diode

Alexandrov, P., Wright, W., Pan, M., Weiner, M., Jiao, L. & Zhao, J. H., Jan 1 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 13-16 4 p. 984427. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Design and fabrication of 4H-SiC APD linear arrays

Yan, F., Qin, C., Zhao, J. H., Bush, N. & Olsen, G., Jan 1 2001, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 17-20 4 p. 984428. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations