• 2919 Citations
  • 30 h-Index
1987 …2018

Research output per year

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Research Output

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2003

3.6 mΩcm2, 1726v 4H-SiC normally-off trenched-and-implanted vertical JFETs

Zhao, J., Tone, K., Li, X., Alexandrov, P., Fursin, L. & Weiner, M., Sep 2 2003, p. 50-53. 4 p.

Rutgers, The State University

Research output: Contribution to conferencePaper

13 Scopus citations

A gate driver based soft-switching SiC bipolar junction transistor

Yu, H., Lai, J., Huang, X., Zhao, J. H., Zhang, J., Hu, X., Carter, J. & Fursin, L., Jan 1 2003, p. 968-973. 6 p.

Rutgers, The State University

Research output: Contribution to conferencePaper

5 Scopus citations
1995

Silicon carbide thyristors for power applications

Burke, T., Xie, K., Flemish, J. R., Singh, H., Carter, J., Zhao, J. H., Buchwald, W. R. & Lorenzo, G., Dec 1 1995, p. 327-335. 9 p.

Research output: Contribution to conferencePaper

4 Scopus citations
1993

Electrical and optical output characteristics of InP/InGaAsP pnpn structures grown via LPE

Buchwald, W. R., Zhao, J. & Zhu, L. D., Jan 1 1993, p. 183-186. 4 p.

Rutgers, The State University

Research output: Contribution to conferencePaper

Fabrication and characterization of 6H-SiC switching devices

Xie, K., Zhao, J., Flemish, J., Burke, T., Buchwald, W., Kingsley, L., Singh, H. & Weiner, M., Dec 1 1993, p. 821-824. 4 p.

Rutgers, The State University

Research output: Contribution to conferencePaper

2 Scopus citations