• 2919 Citations
  • 30 h-Index
1987 …2018

Research output per year

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Research Output

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Article
2013
14 Scopus citations
2011

A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes

Radhakrishnan, R. & Zhao, J. H., Sep 1 2011, In : Solid-State Electronics. 63, 1, p. 167-176 10 p.

Rutgers, The State University

Research output: Contribution to journalArticle

11 Scopus citations

Monolithic integration of a 4H-silicon carbide vertical JFET and a JBS diode

Radhakrishnan, R. & Zhao, J. H., Jun 1 2011, In : IEEE Electron Device Letters. 32, 6, p. 785-787 3 p., 5756451.

Rutgers, The State University

Research output: Contribution to journalArticle

6 Scopus citations

Proton irradiation of ultraviolet 4H-SiC single photon avalanche diodes

Hu, J., Xin, X., Zhao, J. H., Vanmil, B. L., Myers-Ward, R., Eddy, C. R. & Gaskill, D. K., Dec 1 2011, In : IEEE Transactions on Nuclear Science. 58, 6 PART 2, p. 3343-3347 5 p., 6093712.

Rutgers, The State University

Research output: Contribution to journalArticle

8 Scopus citations
2009

High-frequency switching of SiC high-voltage LJFET

Sheng, K., Zhang, Y., Yu, L., Su, M. & Zhao, J. H., Mar 11 2009, In : IEEE Transactions on Power Electronics. 24, 1, p. 271-277 7 p.

Rutgers, The State University

Research output: Contribution to journalArticle

22 Scopus citations

Rheology and thermal conductivity of diamond powder-filled liquid epoxy encapsulants for electronic packaging

Zhang, Y., Hu, X., Zhao, J. H., Sheng, K., Cannon, W. R., Wang, X. & Fursin, L., Dec 1 2009, In : IEEE Transactions on Components and Packaging Technologies. 32, 4, p. 716-723 8 p., 5290024.

Rutgers, The State University

Research output: Contribution to journalArticle

32 Scopus citations
2008

1.88-mΩ · cm2 1650-V normally on 4H-SiC TI-VJFET

Li, Y., Alexandrov, P. & Zhao, J. H., Aug 18 2008, In : IEEE Transactions on Electron Devices. 55, 8, p. 1880-1886 7 p.

Rutgers, The State University

Research output: Contribution to journalArticle

39 Scopus citations

1 × 16 Pt/4H-SiC Schottky photodiode array for low-level EUV and UV spectroscopic detection

Hu, J., Xin, X., Joseph, C. L., Li, X. & Zhao, J., Dec 15 2008, In : IEEE Photonics Technology Letters. 20, 24, p. 2030-2032 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

1 Scopus citations

4H-SiC visible-blind single-photon avalanche diode for ultraviolet detection at 280 and 350 nm

Hu, J., Xin, X., Li, X., Zhao, J., VanMil, B. L., Lew, K. K., Myers-Ward, R. L., Eddy, C. R. & Gaskill, D. K., Aug 18 2008, In : IEEE Transactions on Electron Devices. 55, 8, p. 1977-1983 7 p.

Rutgers, The State University

Research output: Contribution to journalArticle

24 Scopus citations

Current status and future prospects of SiC power JFETs and ICs

Zhao, J. H., Sheng, K., Zhang, Y. & Su, M., Jul 2008, In : IEICE Transactions on Electronics. E91-C, 7, p. 1031-1041 11 p.

Rutgers, The State University

Research output: Contribution to journalArticle

3 Scopus citations

Demonstration of the first SiC power integrated circuit

Sheng, K., Zhang, Y., Su, M., Zhao, J., Li, X., Alexandrov, P. & Fursin, L., Oct 1 2008, In : Solid-State Electronics. 52, 10, p. 1636-1646 11 p.

Rutgers, The State University

Research output: Contribution to journalArticle

17 Scopus citations

Development of 4H-SiC LJFET-based power IC

Zhang, Y., Sheng, K., Su, M., Zhao, J. H., Alexandrov, P., Li, X., Fursin, L. & Weiner, M., Aug 18 2008, In : IEEE Transactions on Electron Devices. 55, 8, p. 1934-1945 12 p.

Rutgers, The State University

Research output: Contribution to journalArticle

17 Scopus citations

Fabrication and characterization of high-current-gain 4H-SiC bipolar junction transistors

Zhang, J., Li, X., Alexandrov, P., Fursin, L., Wang, X. & Zhao, J. H., Aug 18 2008, In : IEEE Transactions on Electron Devices. 55, 8, p. 1899-1906 8 p.

Rutgers, The State University

Research output: Contribution to journalArticle

44 Scopus citations

Implantation-free 4H-SiC bipolar junction transistors with double base epilayers

Zhang, J., Li, X., Alexandrov, P., Burke, T. & Zhao, J. H., May 1 2008, In : IEEE Electron Device Letters. 29, 5, p. 471-473 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

19 Scopus citations

Modeling and design of a monolithically integrated power converter on SiC

Yu, L. C., Sheng, K. & Zhao, J. H., Oct 1 2008, In : Solid-State Electronics. 52, 10, p. 1625-1630 6 p.

Rutgers, The State University

Research output: Contribution to journalArticle

3 Scopus citations

Normally-off 4H-SiC trench-gate MOSFETs with high mobility

Wu, J., Hu, J., Zhao, J., Wang, X., Li, X., Fursin, L. & Burke, T., Jun 1 2008, In : Solid-State Electronics. 52, 6, p. 909-913 5 p.

Rutgers, The State University

Research output: Contribution to journalArticle

7 Scopus citations

Structural and Optical Studies on Ion-implanted 6H-SiC Thin Films

Feng, Z. C., Lien, S. C., Zhao, J., Sun, X. W. & Lu, W., Jun 30 2008, In : Thin Solid Films. 516, 16, p. 5217-5222 6 p.

Rutgers, The State University

Research output: Contribution to journalArticle

17 Scopus citations
2007

1000-V 9.1-mΩ · cm2 normally off 4H-SiC lateral RESURF JFET for power integrated circuit applications

Zhang, Y., Sheng, K., Su, M., Zhao, J. H., Alexandrov, P. & Fursin, L., May 1 2007, In : IEEE Electron Device Letters. 28, 5, p. 404-407 4 p.

Rutgers, The State University

Research output: Contribution to journalArticle

24 Scopus citations
2006

4.3 kV 4H-SiC merged PiN/Schottky diodes

Wu, J., Fursin, L., Li, Y., Alexandrov, P., Weiner, M. & Zhao, J., Jul 1 2006, In : Semiconductor Science and Technology. 21, 7, p. 987-991 5 p., 027.

Rutgers, The State University

Research output: Contribution to journalArticle

7 Scopus citations

430-V 12.4-mΩ · cm2 normally off 4H-SiC lateral JFET

Su, M., Sheng, K., Li, Y., Zhang, Y., Wu, J., Zhao, J. H., Zhang, J. & Li, L. X., Dec 1 2006, In : IEEE Electron Device Letters. 27, 10, p. 834-836 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

12 Scopus citations

4H-SiC power bipolar junction transistor with a very low specific ON-resistance of 2.9 mΩ · cm2

Zhang, J., Alexandrov, P., Burke, T. & Zhao, J. H., May 1 2006, In : IEEE Electron Device Letters. 27, 5, p. 368-370 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

30 Scopus citations

Highly sensitive visible-blind extreme ultraviolet Ni/4H-SiC Schottky photodiodes with large detection area

Hu, J., Xin, X., Zhao, J., Yan, F., Guan, B., Seely, J. & Kjornrattanawanich, B., Jun 1 2006, In : Optics Letters. 31, 11, p. 1591-1593 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

37 Scopus citations

High temperature characterization of SiC BJTs for power switching applications

Sheng, K., Yu, L. C., Zhang, J. & Zhao, J. H., Jun 1 2006, In : Solid-State Electronics. 50, 6, p. 1073-1079 7 p.

Rutgers, The State University

Research output: Contribution to journalArticle

13 Scopus citations
2005

1677 V, 5.7 mΩ · cm2 4H-SiC BJTs

Zhang, J., Alexandrov, P., Zhao, J. H. & Burke, T., Mar 1 2005, In : IEEE Electron Device Letters. 26, 3, p. 188-190 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

4 Scopus citations

Channel electron mobility in 4H-SiC lateral junction field effect transistors

Sannuti, P., Li, X., Yan, F., Sheng, K. & Zhao, J. H., Dec 1 2005, In : Solid-State Electronics. 49, 12, p. 1900-1904 5 p.

Rutgers, The State University

Research output: Contribution to journalArticle

3 Scopus citations

Demonstration of 4H-SiC visible-blind EUV and UV detector with large detection area

Xin, X., Yan, F., Koeth, T. W., Joseph, C., Hu, J., Wu, J. & Zhao, J. H., Oct 13 2005, In : Electronics Letters. 41, 21, p. 1192-1193 2 p.

Rutgers, The State University

Research output: Contribution to journalArticle

43 Scopus citations

Silicon carbide power field-effect transistors

Zhao, J. H., Jan 1 2005, In : MRS Bulletin. 30, 4, p. 293-298 6 p.

Rutgers, The State University

Research output: Contribution to journalArticle

17 Scopus citations
2004

1530V, 16.8mΩ·cm2, 4H-SiC normally-off vertical junction field-effect transistor

Fursin, L. G., Zhao, J. & Weiner, M., Feb 19 2004, In : Electronics Letters. 40, 4, p. 270-271 2 p.

Rutgers, The State University

Research output: Contribution to journalArticle

1 Scopus citations

3.6 mΩ cm2, 1726 V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applications

Zhao, J., Tone, K., Li, X., Alexandrov, P., Fursin, L. & Weiner, M., Jun 1 2004, In : IEE Proceedings: Circuits, Devices and Systems. 151, 3, p. 231-237 7 p.

Rutgers, The State University

Research output: Contribution to journalArticle

15 Scopus citations

4H-SiC UV photo detectors with large area and very high specific detectivity

Yan, F., Xin, X., Aslam, S., Zhao, Y., Franz, D., Zhao, J. H. & Weiner, M., Sep 1 2004, In : IEEE Journal of Quantum Electronics. 40, 9, p. 1315-1320 6 p.

Rutgers, The State University

Research output: Contribution to journalArticle

97 Scopus citations

Demonstration of 1789 V, 6.68 mΩ · cm2 4H-SiC merged-PiN-Schottky diodes

Zhao, J., Fursin, L., Jiao, L., Li, X. & Burke, T., Mar 18 2004, In : Electronics Letters. 40, 6, p. 390-391 2 p.

Rutgers, The State University

Research output: Contribution to journalArticle

7 Scopus citations

Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor

Zhang, J., Zhao, J. H., Alexandrov, P. & Burke, T., Oct 14 2004, In : Electronics Letters. 40, 21, p. 1381-1383 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

39 Scopus citations

Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET

Zhao, J. H., Alexandrov, P., Zhang, J. & Li, X., Jul 1 2004, In : IEEE Electron Device Letters. 25, 7, p. 474-476 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

53 Scopus citations

Fabrication and characterization of high current gain (β = 430) and high power (23 A-500 V) 4H-SiC hybrid darlington bipolar transistor

Luo, Y., Zhang, J., Alexandrov, P., Fursin, L. & Zhao, J. H., Dec 1 2004, In : IEEE Transactions on Electron Devices. 51, 12, p. 2211-2216 6 p.

Rutgers, The State University

Research output: Contribution to journalArticle

6 Scopus citations
2003

1710-V 2.77-mΩcm2 4H-SiC trenched and implanted vertical junction field-effect transistors

Zhao, J., Tone, K., Alexandrov, P., Fursin, L. & Weiner, M., Feb 1 2003, In : IEEE Electron Device Letters. 24, 2, p. 81-83 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

26 Scopus citations

A high current gain 4H-SiC NPN power bipolar junction transistor

Zhang, J., Luo, Y., Alexandrov, P., Fursin, L. & Zhao, J., May 1 2003, In : IEEE Electron Device Letters. 24, 5, p. 327-329 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

31 Scopus citations

Demonstration of 4H-SiC avalanche photodiodes linear array

Yan, F., Qin, C., Zhao, J., Bush, M., Olsen, G., Ng, B. K., David, J. P. R., Tozer, R. C. & Weiner, M., Feb 1 2003, In : Solid-State Electronics. 47, 2, p. 241-245 5 p.

Rutgers, The State University

Research output: Contribution to journalArticle

23 Scopus citations

Demonstration of a high performance 4H-SiC vertical junction field effect transistor without epitaxial regrowth

Zhao, J., Tone, K., Zhang, J., Alexandrov, P., Fursin, L. & Weiner, M., Feb 6 2003, In : Electronics Letters. 39, 3, p. 321-323 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

1 Scopus citations

Demonstration of first 1050 V, 21.7 mΩ cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel

Zhao, J., Alexandrov, P., Fursin, L. & Weiner, M., Jan 9 2003, In : Electronics Letters. 39, 1, p. 151-152 2 p.

Rutgers, The State University

Research output: Contribution to journalArticle

4 Scopus citations

Demonstration of first 10 kV, 130 mΩcm2 normally-off 4H-SiC trenched-and-implanted vertical junction field-effect transistor

Alexandrov, P., Zhang, J., Li, X. & Zhao, J., Dec 11 2003, In : Electronics Letters. 39, 25, p. 1860-1861 2 p.

Rutgers, The State University

Research output: Contribution to journalArticle

12 Scopus citations

Demonstration of high voltage (600-1300 V), high current (10-140 A), fast recovery 4H-SiC p-i-n/Schottky(MPS) barrier diodes

Alexandrov, P., Wright, W., Pan, M., Weiner, M., Jiao, L. & Zhao, J. H., Feb 1 2003, In : Solid-State Electronics. 47, 2, p. 263-269 7 p.

Rutgers, The State University

Research output: Contribution to journalArticle

22 Scopus citations

Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

Zhao, J. H., Alexandrov, P. & Li, X., Jun 1 2003, In : IEEE Electron Device Letters. 24, 6, p. 402-404 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

96 Scopus citations

Design of a novel planar normally-off power VJFET in 4H-SiC

Zhao, J., Li, X., Tone, K., Alexandrov, P., Pan, M. & Weiner, M., Feb 1 2003, In : Solid-State Electronics. 47, 2, p. 377-384 8 p.

Rutgers, The State University

Research output: Contribution to journalArticle

18 Scopus citations

High Voltage (>1 kV) and High Current Gain (32) 4H-SiC Power BJTs Using Al-Free Ohmic Contact to the Base

Luo, Y., Zhang, J., Alexandrov, P., Fursin, L., Zhao, J. & Burke, T., Nov 1 2003, In : IEEE Electron Device Letters. 24, 11, p. 695-697 3 p.

Rutgers, The State University

Research output: Contribution to journalArticle

15 Scopus citations

Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

Ng, B. K., David, J. P. R., Tozer, R. C., Rees, G. J., Yan, F., Zhao, J. H. & Weiner, M., Aug 1 2003, In : IEEE Transactions on Electron Devices. 50, 8, p. 1724-1732 9 p.

Rutgers, The State University

Research output: Contribution to journalArticle

59 Scopus citations

On the temperature coefficient of 4H-SiC BJT current gain

Li, X., Luo, Y., Fursin, L., Zhao, J., Pan, M., Alexandrov, P. & Weiner, M., Feb 1 2003, In : Solid-State Electronics. 47, 2, p. 233-239 7 p.

Rutgers, The State University

Research output: Contribution to journalArticle

39 Scopus citations

Performance of thin 4H-SiC UV avalanche photodiodes

Ng, B. K., David, J. P. R., Tozer, R. C., Rees, G. J., Yan, F., Qin, C. & Zhao, J., Apr 1 2003, In : IEE Proceedings: Optoelectronics. 150, 2, p. 187-190 4 p.

Rutgers, The State University

Research output: Contribution to journalArticle

4 Scopus citations
2002

High performance 1500 V 4H-SiC junction barrier Schottky diodes

Zhao, J. H., Alexandrov, P., Fursin, L., Feng, Z. C. & Weiner, M., Oct 24 2002, In : Electronics Letters. 38, 22, p. 1389-1390 2 p.

Research output: Contribution to journalArticle

11 Scopus citations

Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiC

Chang, W., Feng, Z. C., Lin, J., Liu, R., Wee, A. T. S., Tone, K. & Zhao, J. H., Jun 1 2002, In : Surface and Interface Analysis. 33, 6, p. 500-505 6 p.

Research output: Contribution to journalArticle

7 Scopus citations

Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2° positive bevel

Yan, F., Qin, C., Zhao, J. H., Weiner, M., Ng, B. K., David, J. P. R. & Tozer, R. C., Mar 28 2002, In : Electronics Letters. 38, 7, p. 335-336 2 p.

Rutgers, The State University

Research output: Contribution to journalArticle

32 Scopus citations