• 2919 Citations
  • 30 h-Index
1987 …2018

Research output per year

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Research Output

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Conference article
2004

1,530V, 17.5 mωcm2normally-off 4H-SiC VJFET design, fabrication and characterization

Fursin, L., Li, X. & Zhao, J. H., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1157-1160 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

3 Scopus citations

2.5KV-30A inductively loaded half-bridge inverter switching using 4H-SiC MPS free-wheeling diodes

Li, Y., Fursin, L., Wu, J., Alexandrov, P. & Zhao, J. H., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1097-1100 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

4 Scopus citations

4,308V, 20.9 mΩ-cm2 4H-SiC MPS diodes based on a 30μm drift layer

Wu, J., Fursin, L., Li, Y., Alexandrov, P. & Zhao, J. H., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1109-1112 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

10 Scopus citations

4,340V, 40 mωcm2 normally-off 4H-SiC VJFET

Zhao, J. H., Fursin, L., Alexandrov, P., Li, X. & Weiner, M., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1161-1164 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

7 Scopus citations

6A, 1kV 4H-SiC normally-off trenched-and-Lmplanted vertical JFETs

Zhao, J. H., Tone, K., Li, X., Alexandrov, P., Fursin, L. & Weiner, M., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1213-1216 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

3 Scopus citations

A 500V, very high current gain (β=1517) 4H-SiC bipolar darlington transistor

Zhang, J., Alexandrov, P. & Zhao, J. H., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1165-1168 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

1 Scopus citations

A high voltage (1,750V) and high current gain (β= 24.8) 4H-SiC bipolar junction transistor using a thin (12 μm) drift layer

Zhao, J. H., Zhang, J., Alexandrov, P., Li, X. & Burke, T., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1173-1176 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

16 Scopus citations

A high voltage (1570V) 4H-SiC bipolar darlington with current gain β>640 and tested in a half-bridge inverter up to 20A at V Bus=900V

Zhao, J. H., Zhang, J., Alexandrov, P. & Burke, T., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1169-1172 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

2 Scopus citations

Avalanche multiplication and breakdown in 4H-SiC diodes

Ng, B. K., David, J. P. R., Massey, D. J., Tozer, R. C., Rees, G. J., Yan, F., Zhao, J. H. & Weiner, M., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1069-1072 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

4 Scopus citations

Demonstration of the first 4H-SiC metal-semiconductor-metal ultraviolet photodetector

Wu, Z., Xin, X., Van, F. & Zhao, J. H., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1491-1494 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

15 Scopus citations

Design of 1.7 to 14kV normally-off trenched and implanted vertical JFET in 4H-SiC

Li, X. & Zhao, J. H., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1197-1200 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

6 Scopus citations

High power(500V-70A) and high gain(44-47) 4H-SiC bipolar junction transistors

Zhang, J., Alexandrov, P. & Zhao, J. H., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1149-1152 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

14 Scopus citations

High voltage (500V-14kV) 4H-SiC unipolar-bipolar darlington transistors for high-power and high-temperature applications

Zhao, J. H., Li, X., Tone, K., Alexandrov, P., Fursin, L., Carter, J. & Weiner, M., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 957-962 6 p.

Rutgers, The State University

Research output: Contribution to journalConference article

2 Scopus citations

The first 4H-SiC BJT-based 20 kHz, 7HP PWM DC-to-AC inverter for induction motor control applications

Zhao, J. H., Zhang, J., Luo, Y., Hu, X., Li, Y., Yu, H., Lai, J., Alexandrov, P., Fursin, L., Li, X., Carter, J. & Weiner, M., Jan 1 2004, In : Materials Science Forum. 457-460, II, p. 1137-1140 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

3 Scopus citations
2003

Gate driver based soft switching for SiC BJT inverter

Yu, H., Lai, J., Zhao, J. H. & Wright, B. H., Aug 22 2003, In : PESC Record - IEEE Annual Power Electronics Specialists Conference. 4, p. 1857-1862 6 p.

Rutgers, The State University

Research output: Contribution to journalConference article

5 Scopus citations

High gain, low noise 4H-SiC UV avalanche photodiodes

Ng, B. K., David, J. P. R., Tozer, R. C., Rees, G. J., Yan, F., Qin, C. & Zhao, J. H., Dec 1 2003, In : Institute of Physics Conference Series. 174, p. 355-358 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

2002

An IGBT and MOSFET gated SiC bipolar junction transistor

Yu, H., Lai, J., Li, X., Luo, Y., Fursin, L., Zhao, J., Alexandrov, P., Wright, B. & Weiner, M., Jan 1 2002, In : Conference Record - IAS Annual Meeting (IEEE Industry Applications Society). 4, p. 2609-2613 5 p.

Rutgers, The State University

Research output: Contribution to journalConference article

13 Scopus citations

Comparative study of TeraHertz generation in wide band gap bulk semiconductors

Starikov, E., Shiktorov, P., Gružinskis, V., Reggiani, L., Varani, L., Vaissière, J. C. & Zhao, J. H., Jan 1 2002, In : Materials Science Forum. 384-385, p. 205-208 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

8 Scopus citations

Theoretical design and analysis of SiC n++pn-n+nn++-diodes for 400 GHz microwave power generation

Gružinskis, V., Starikov, E., Shiktorov, P. & Zhao, J. H., Jan 1 2002, In : Materials Science Forum. 384-385, p. 217-220 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

2000

Characterization of 4H-SiC gate turn-off thyristor

Cao, L., Li, B. & Zhao, J. H., Feb 1 2000, In : Solid-State Electronics. 44, 2, p. 347-352 6 p.

Rutgers, The State University

Research output: Contribution to journalConference article

16 Scopus citations

Demonstration of high performance visible-blind 4H-SiC avalanche photodiodes

Yan, F., Luo, Y., Zhao, J., Dries, C. & Olsen, G., Jan 1 2000, In : Materials Science Forum. 338

Rutgers, The State University

Research output: Contribution to journalConference article

Demonstration of the first 4H-SiC avalanche photodiodes

Feng Yan, Y., Zhao, J. H. & Olsen, G. H., Feb 1 2000, In : Solid-State Electronics. 44, 2, p. 341-346 6 p.

Rutgers, The State University

Research output: Contribution to journalConference article

35 Scopus citations

Fabrication and characterization of 4H-SiC GTOs and diodes

Fursin, L., Tone, K., Alexandrov, P., Luo, Y., Cao, L., Zhao, J., Weiner, M. & Pan, M., Jan 1 2000, In : Materials Science Forum. 338

Rutgers, The State University

Research output: Contribution to journalConference article

7 Scopus citations

Fabrication and testing of 1,000 V-60 A 4H-SiC MPS diodes in an inductive half-bridge circuit

Tone, K., Zhao, J., Weiner, M. & Pan, M., Jan 1 2000, In : Materials Science Forum. 338

Rutgers, The State University

Research output: Contribution to journalConference article

10 Scopus citations

Microscopic probing of Raman scattering and photoluminescence on C-Al ion co-implanted 6H-SiC

Feng, Z. C., Chua, S. J., Shen, Z. X., Tone, K. & Zhao, J., Jan 1 2000, In : Materials Science Forum. 338

Research output: Contribution to journalConference article

Monte Carlo simulation of 4H-SiC IMPATT diodes

Gruzinskis, V., Luo, Y., Zhao, J., Weiner, M., Pan, M., Shiktorov, P. & Starikov, E., Jan 1 2000, In : Materials Science Forum. 338

Rutgers, The State University

Research output: Contribution to journalConference article

2 Scopus citations

Monte Carlo simulation of Gunn effect and microwave power generation at 240 GHz in n+-n--n-n+ GaN structures

Zhao, J., Gruzinskis, V., Weiner, M., Pan, M., Shiktorov, P. & Starikov, E., Jan 1 2000, In : Materials Science Forum. 338

Rutgers, The State University

Research output: Contribution to journalConference article

1 Scopus citations

Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC

Luo, Y., Yan Feng, F., Tone, K., Zhao, J. H. & Crofton, J., Jan 1 2000, In : Materials Science Forum. 338, p. II/-

Rutgers, The State University

Research output: Contribution to journalConference article

6 Scopus citations

Theoretical and experimental study of 4H-SiC junction edge termination

Li, X., Tone, K., Cao, L. H., Alexandrov, P., Fursin, L. & Zhao, J. H., Jan 1 2000, In : Materials Science Forum. 338, p. II/-

Rutgers, The State University

Research output: Contribution to journalConference article

34 Scopus citations
1998

Effect of post-metal annealing on the quality of thermally grown silicon dioxide on 6H- and 4H-SiC

Campi, J., Shi, Y., Luo, Y., Yan, F., Lee, Y. K. & Zhao, J., Jan 1 1998, In : Materials Science Forum. 264-268, pt 2, p. 849-852 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

2 Scopus citations

Operation of power semiconductors at their thermal limit

Piccone, D. E., Rodrigues, R. G., Tobin, W. H., Willinger, L. W., Barrow, J. A., Hansen, T. A., Zhao, J. & Cao, L., Dec 1 1998, In : Conference Record - IAS Annual Meeting (IEEE Industry Applications Society). 2, p. 942-953 12 p.

Research output: Contribution to journalConference article

8 Scopus citations
1996

High-temperature switching characteristics of 6H-SiC thyristor

Xie, K., Flemish, J. R., Burke, T., Buchwald, W. R. & Zhao, J. H., Jan 1 1996, In : Materials Research Society Symposium - Proceedings. 423, p. 93-98 6 p.

Rutgers, The State University

Research output: Contribution to journalConference article

1 Scopus citations

Silicon carbide power devices for high temperature, high power density switching applications

Burke, T., Xie, K., Flemish, J. R., Singh, H., Podlesak, T. & Zhao, J. H., Dec 1 1996, In : IEEE Conference Record of Power Modulator Symposium. p. 18-21 4 p.

Research output: Contribution to journalConference article

11 Scopus citations
1994

Comparison of microwave ECR and RF plasmas for dry etching of single crystal 6H-SiC

Flemish, J. R., Xie, K., Buchwald, W., Casas, L., Zhao, J. H., McLane, G. & Dubey, M., Jan 1 1994, In : Materials Research Society Symposium - Proceedings. 339, p. 145-150 6 p.

Research output: Contribution to journalConference article

12 Scopus citations

Switching characteristics of a high-temperature 6H-SiC thyristor

Xie, K., Buchwald, W. R., Zhao, J. H., Flemish, J. R., Burke, T., Kingsley, L., Weiner, M. & Singh, H., Dec 1 1994, In : Technical Digest - International Electron Devices Meeting. p. 415-418 4 p.

Rutgers, The State University

Research output: Contribution to journalConference article

6 Scopus citations