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1987 …2018

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Letter
2003

4H-SiC normally-off vertical junction field-effect transistor with high current density

Tone, K., Zhao, J. H., Fursin, L., Alexandrov, P. & Weiner, M., Jul 1 2003, In : IEEE Electron Device Letters. 24, 7, p. 463-465 3 p.

Rutgers, The State University

Research output: Contribution to journalLetter

55 Scopus citations