• 2919 Citations
  • 30 h-Index
1987 …2018

Research output per year

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Research Output

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Review article
2010

Reply to comments on "1.88-mΩ · cm2 1650-V normally on 4H-SiC TI-VJFET"

Li, Y., Alexandrov, P. & Zhao, J. H., Dec 1 2010, In : IEEE Transactions on Electron Devices. 57, 12, p. 3543-3547 5 p., 5607303.

Rutgers, The State University

Research output: Contribution to journalReview article

2005

Silicon carbide schottky barrier diode

Zhao, J. H., Sheng, K. & Lebron-Velilla, R. C., Dec 1 2005, In : International Journal of High Speed Electronics and Systems. 15, 4, p. 821-866 46 p.

Rutgers, The State University

Research output: Contribution to journalReview article

26 Scopus citations
1998

Evaluation of damage induced by inductively coupled plasma etching of 6H-SiC using Au Schottky barrier diodes

Li, B., Cao, L. & Zhao, J., Dec 1 1998, In : Applied Physics Letters. 73, 5, p. 653-655 3 p.

Rutgers, The State University

Research output: Contribution to journalReview article

29 Scopus citations
1997

Evaluation of ohmic contacts to P-type 6H-SiC created by C and Al coimplantation

Zhao, J. H., Tone, K., Weiner, S. R., Caleca, M. A., Du, H. & Withrow, S. P., Aug 1 1997, In : IEEE Electron Device Letters. 18, 8, p. 375-377 3 p.

Rutgers, The State University

Research output: Contribution to journalReview article

32 Scopus citations