Demonstrating SiC Gate Controlled Thyristors for High Power and High Temperature Applications

  • Zhao, Jian (PI)

Project Details


9522634 Zhao The potential for SiC is based upon its high breakdown field strength, high temperature operation (due to its wide bandgap) and good thermal conductivity. However, this potential will not be realized unless fundamental studies are carried out on SiC surfaces and with ohmic constacts, especially to p-type regions. The research is directed towards the realization of a Gate Controlled Thyristor (GCT) which is an important device for SiC Power Electronics. A Plasma-Etched (ECR) U-Groove vertical GCT structure fabricated in 6H-SiC is proposed which requires (1) high quality gate oxides over p-type regions and (2) good ohmic to the p-type regions. ***

Effective start/end date9/15/958/31/97


  • National Science Foundation: $99,991.00


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