1.88-mΩ · cm2 1650-V normally on 4H-SiC TI-VJFET

Yuzhu Li, Petre Alexandrov, Jian H. Zhao

Research output: Contribution to journalArticle

39 Scopus citations

Abstract

The SiC trenched-and-implanted vertical junction field-effect transistor (TI-VJFET) is an excellent device for power switching applications, but its on-resistance needs to be further reduced to suppress ON-state power loss. In this paper, we used small cell pitch size and high channel/ drift layer doping concentration to achieve low on-resistance. Advanced fabrication processes, such as Bosch process trench etching, self-aligned Ni silicide, and self-aligned gate overlay were implemented to support such an aggressive design. Normally on 4H-SiC TI-VJFETs of various channel-opening dimensions have been designed and fabricated based on a 12 μm 1.8 × 1016 cm-3 doped drift layer. Record high performance TI-VJFETs have been achieved and will be reported. Other SiC VJFET structures under active research are reviewed and compared to TI-VJFET. Without the need for epi-regrowth or stringent lithography alignment, TI-VJFET has the advantage of a less demanding fabrication process. In addition, its high current density, adjustable channel width and low gate resistance make TI-VJFET an excellent device for fast power switching applications.

Original languageEnglish (US)
Pages (from-to)1880-1886
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume55
Issue number8
DOIs
StatePublished - Aug 18 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • High-temperature electronics
  • Junction field-effect transistor (JFET)
  • Normally off
  • Normally on
  • Silicon carbide (SiC)
  • Vertical channel

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