4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW

P. Alexandrov; B. Wright; M. Pan; M. Weiner; L. Fursin; J. H. Zhao

doi:https://doi.org/10.4028/www.scientific.net/MSF.389-393.1177

4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW

P. Alexandrov, B. Wright, M. Pan, M. Weiner, L. Fursin, J. H. Zhao

Engn - Elec & Computer Engn

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In this work, 600K 4H-SiC MPS diodes were designed, fabricated and tested. The diodes were designed with a multi-step junction termination extension (MJTE) to improve the blocking voltage. The highest forward current capability of a packaged MPS diode showed a current of 50,4 at 2V and 140A at 4V. The SiC MPS diode reverse voltage showed excellent suppression of the Schottky leakage current at temperatures up to 250°C. Switching measurements using a half-bridge circuit, at currents up to 230A, showed a substantial reduction in diode dissipation, compared to a state of the art Si diode; a 47% energy loss reduction at room temperature(RT) and 84% at 200°C. The IGBT energy loss reduction, when using an MPS diode, was 15% at room temperature and 45% at 150°C. The diodes should result in improved efficiency when used in electric vehicles.

Original language	English (US)
Title of host publication	Silicon Carbide and Related Materials 2001
Editors	S. Yoshida, S. Nishino, H. Harima, T. Kimoto
Publisher	Trans Tech Publications Ltd
Pages	1177-1180
Number of pages	4
ISBN (Print)	9780878498949
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.389-393.1177
State	Published - 2002
Event	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan Duration: Oct 28 2001 → Nov 2 2001

Publication series

Name	Materials Science Forum
Volume	389-393

Other

Other	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Country/Territory	Japan
City	Tsukuba
Period	10/28/01 → 11/2/01

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Half-bridge inverter
Schottky diodes
pn junctions

Access to Document

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1177

Cite this

Alexandrov, P., Wright, B., Pan, M., Weiner, M., Fursin, L., & Zhao, J. H. (2002). 4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 1177-1180). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1177

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title = "4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW",

abstract = "In this work, 600K 4H-SiC MPS diodes were designed, fabricated and tested. The diodes were designed with a multi-step junction termination extension (MJTE) to improve the blocking voltage. The highest forward current capability of a packaged MPS diode showed a current of 50,4 at 2V and 140A at 4V. The SiC MPS diode reverse voltage showed excellent suppression of the Schottky leakage current at temperatures up to 250°C. Switching measurements using a half-bridge circuit, at currents up to 230A, showed a substantial reduction in diode dissipation, compared to a state of the art Si diode; a 47% energy loss reduction at room temperature(RT) and 84% at 200°C. The IGBT energy loss reduction, when using an MPS diode, was 15% at room temperature and 45% at 150°C. The diodes should result in improved efficiency when used in electric vehicles.",

keywords = "Half-bridge inverter, Schottky diodes, pn junctions",

author = "P. Alexandrov and B. Wright and M. Pan and M. Weiner and L. Fursin and Zhao, {J. H.}",

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doi = "https://doi.org/10.4028/www.scientific.net/MSF.389-393.1177",

language = "English (US)",

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Alexandrov, P, Wright, B, Pan, M, Weiner, M, Fursin, L & Zhao, JH 2002, 4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW. in S Yoshida, S Nishino, H Harima & T Kimoto (eds), Silicon Carbide and Related Materials 2001. Materials Science Forum, vol. 389-393, Trans Tech Publications Ltd, pp. 1177-1180, International Conference on Silicon Carbide and Related Materials, ICSCRM 2001, Tsukuba, Japan, 10/28/01. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1177

4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW. / Alexandrov, P.; Wright, B.; Pan, M.; Weiner, M.; Fursin, L.; Zhao, J. H.

Silicon Carbide and Related Materials 2001. ed. / S. Yoshida; S. Nishino; H. Harima; T. Kimoto. Trans Tech Publications Ltd, 2002. p. 1177-1180 (Materials Science Forum; Vol. 389-393).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - 4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW

AU - Alexandrov, P.

AU - Wright, B.

AU - Pan, M.

AU - Weiner, M.

AU - Fursin, L.

AU - Zhao, J. H.

N1 - Publisher Copyright: © (2002) Trans Tech Publications, Switzerland.

PY - 2002

Y1 - 2002

N2 - In this work, 600K 4H-SiC MPS diodes were designed, fabricated and tested. The diodes were designed with a multi-step junction termination extension (MJTE) to improve the blocking voltage. The highest forward current capability of a packaged MPS diode showed a current of 50,4 at 2V and 140A at 4V. The SiC MPS diode reverse voltage showed excellent suppression of the Schottky leakage current at temperatures up to 250°C. Switching measurements using a half-bridge circuit, at currents up to 230A, showed a substantial reduction in diode dissipation, compared to a state of the art Si diode; a 47% energy loss reduction at room temperature(RT) and 84% at 200°C. The IGBT energy loss reduction, when using an MPS diode, was 15% at room temperature and 45% at 150°C. The diodes should result in improved efficiency when used in electric vehicles.

AB - In this work, 600K 4H-SiC MPS diodes were designed, fabricated and tested. The diodes were designed with a multi-step junction termination extension (MJTE) to improve the blocking voltage. The highest forward current capability of a packaged MPS diode showed a current of 50,4 at 2V and 140A at 4V. The SiC MPS diode reverse voltage showed excellent suppression of the Schottky leakage current at temperatures up to 250°C. Switching measurements using a half-bridge circuit, at currents up to 230A, showed a substantial reduction in diode dissipation, compared to a state of the art Si diode; a 47% energy loss reduction at room temperature(RT) and 84% at 200°C. The IGBT energy loss reduction, when using an MPS diode, was 15% at room temperature and 45% at 150°C. The diodes should result in improved efficiency when used in electric vehicles.

KW - Half-bridge inverter

KW - Schottky diodes

KW - pn junctions

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DO - https://doi.org/10.4028/www.scientific.net/MSF.389-393.1177

M3 - Conference contribution

SN - 9780878498949

T3 - Materials Science Forum

SP - 1177

EP - 1180

BT - Silicon Carbide and Related Materials 2001

A2 - Yoshida, S.

A2 - Nishino, S.

A2 - Harima, H.

A2 - Kimoto, T.

PB - Trans Tech Publications Ltd

T2 - International Conference on Silicon Carbide and Related Materials, ICSCRM 2001

Y2 - 28 October 2001 through 2 November 2001

ER -

Alexandrov P, Wright B, Pan M, Weiner M, Fursin L, Zhao JH. 4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW. In Yoshida S, Nishino S, Harima H, Kimoto T, editors, Silicon Carbide and Related Materials 2001. Trans Tech Publications Ltd. 2002. p. 1177-1180. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.389-393.1177

4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW

Abstract

Publication series

Other

ASJC Scopus subject areas

Keywords

Access to Document

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