4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW

P. Alexandrov, B. Wright, M. Pan, M. Weiner, L. Fursin, J. H. Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this work, 600K 4H-SiC MPS diodes were designed, fabricated and tested. The diodes were designed with a multi-step junction termination extension (MJTE) to improve the blocking voltage. The highest forward current capability of a packaged MPS diode showed a current of 50,4 at 2V and 140A at 4V. The SiC MPS diode reverse voltage showed excellent suppression of the Schottky leakage current at temperatures up to 250°C. Switching measurements using a half-bridge circuit, at currents up to 230A, showed a substantial reduction in diode dissipation, compared to a state of the art Si diode; a 47% energy loss reduction at room temperature(RT) and 84% at 200°C. The IGBT energy loss reduction, when using an MPS diode, was 15% at room temperature and 45% at 150°C. The diodes should result in improved efficiency when used in electric vehicles.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Pages1177-1180
Number of pages4
ISBN (Print)9780878498949
DOIs
StatePublished - 2002
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: Oct 28 2001Nov 2 2001

Publication series

NameMaterials Science Forum
Volume389-393

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Country/TerritoryJapan
CityTsukuba
Period10/28/0111/2/01

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Half-bridge inverter
  • Schottky diodes
  • pn junctions

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