4H-SiC single photon avalanche diode for 280nm UV applications

Jun Hu, Xiaobin Xin, Petre Alexandrov, Jian H. Zhao, Brenda L. Van Mil, D. Kurt Gaskill, Kok Keong Lew, Rachael Myers-Ward, Charles R. Eddy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an avalanche breakdown voltage of 114V. At 90% and 95% of the breakdown voltage, the SPAD shows a low dark current of 57.2fA and 159fA, respectively. The quantum efficiency of 29.8% at 280nm and <0.007% at 400nm indicates a high UV-to-visible rejection ratio of gt;4300. Single photon counting measurement at 280nm shows that a single photon detection efficiency of 2.83% with a low dark count rate of 22kHz is achieved at the avalanche breakdown voltage of 116.8V.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages1203-1206
Number of pages4
Volume600-603
ISBN (Print)9780878493579
DOIs
StatePublished - Jan 1 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603

Other

Other12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period10/14/0710/19/07

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Materials Science(all)

Keywords

  • And visible blind
  • Quantum efficiency
  • SPAD
  • Single photon detection efficiency

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  • Cite this

    Hu, J., Xin, X., Alexandrov, P., Zhao, J. H., Van Mil, B. L., Gaskill, D. K., Lew, K. K., Myers-Ward, R., & Eddy, C. R. (2009). 4H-SiC single photon avalanche diode for 280nm UV applications. In A. Suzuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & T. Fuyuki (Eds.), Silicon Carbide and Related Materials 2007 (Vol. 600-603, pp. 1203-1206). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908453-11-9.1199