5 kV, 9.5 A SiC JBS diodes with non-uniform guard ring edge termination for high power switching application

Jun Hu, Larry X. Li, Petre Alexandrov, Xiaohui Wang, Jian H. Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. The JBS diodes based on a 45μm thick, 1.4×10 15cm-3 doped drift layer with multiple non-uniform spacing guard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has a forward current density of 108A/cm2 at 3.5V and a specific on resistance (RSP-ON) of 25.2mω·cm 2, which is very close to the theoretical RSP-ON of 23.3mω·cm2. DC I-V measurement of packaged JBS diodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a bus voltage up to 2.5kV was used to characterize the high power switching performance of SiC JBS diodes. A large inductance load of 1mH was used to simulate the load of a high power AC induction motor. Compared to a Si PIN diode module, the SiC JBS package reduces diode turn-off energy loss by 30% and Si IGBT turn-on energy loss by 21% at room temperature.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages947-950
Number of pages4
ISBN (Print)9780878493579
StatePublished - 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603

Other

Other12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country/TerritoryJapan
CityOtsu
Period10/14/0710/19/07

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Guard ring edge termination
  • Half bridge inverter
  • JBS diode

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