A comparison of surface passivation techniques for measurement of minority carrier lifetime in thin Si wafers: Toward a stable and uniform passivation

Bhushan Sopori, Srinivas Devayajanam, Prakash Basnyat, Vishal Mehta, Helio Moutinho, Bill Nemeth, Vincenzo Lasalvia, Steve Johnston, N. Ravindra, Jeff Binns, Jesse Appel

Research output: Contribution to journalConference articlepeer-review

Abstract

We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.

Original languageEnglish (US)
JournalMaterials Research Society Symposium Proceedings
Volume1670
DOIs
StatePublished - Jan 1 2014
Event2014 MRS Spring Meeting - San Francisco, United States
Duration: Apr 21 2014Apr 25 2014

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Materials Science(all)

Keywords

  • Si
  • oxide
  • passivation

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