A high current gain 4H-SiC NPN power bipolar junction transistor

Jianhui Zhang; Yanbin Luo; Petre Alexandrov; Leonid Fursin; Jian H. Zhao

doi:https://doi.org/10.1109/LED.2003.812531

A high current gain 4H-SiC NPN power bipolar junction transistor

Jianhui Zhang, Yanbin Luo, Petre Alexandrov, Leonid Fursin, Jian H. Zhao

School of Engineering, Electrical & Computer Engineering

Rutgers, The State University

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

This letter reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150°C. The transistor blocks larger than 480 V and conducts 2.1 A (J_c = 239 A/cm²) at V_ce = 3.4 V, corresponding to a specific on-resistance (R_sp-on) of 14 mΩcm², based on a drift layer design of 12 μm doped to 6 × 10¹⁵ cm^-3. Current gain β ≥ 35 has been achieved for collector current densities ranging from J_c = 40 A/cm² to 239 A/cm² (I_c = 2.1 A) with a peak current gain of 38 at J_c = 114 A/cm².

Original language	American English
Pages (from-to)	327-329
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	5
DOIs	https://doi.org/10.1109/LED.2003.812531
State	Published - May 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Bipolar junction transistors (BJTs)
Power transistors
Silicon carbide

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https://doi.org/10.1109/LED.2003.812531

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title = "A high current gain 4H-SiC NPN power bipolar junction transistor",

abstract = "This letter reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150°C. The transistor blocks larger than 480 V and conducts 2.1 A (Jc = 239 A/cm2) at Vce = 3.4 V, corresponding to a specific on-resistance (Rsp-on) of 14 mΩcm2, based on a drift layer design of 12 μm doped to 6 × 1015 cm-3. Current gain β ≥ 35 has been achieved for collector current densities ranging from Jc = 40 A/cm2 to 239 A/cm2 (Ic = 2.1 A) with a peak current gain of 38 at Jc = 114 A/cm2.",

keywords = "Bipolar junction transistors (BJTs), Power transistors, Silicon carbide",

author = "Jianhui Zhang and Yanbin Luo and Petre Alexandrov and Leonid Fursin and Zhao, {Jian H.}",

note = "Funding Information: Manuscript received February 21, 2003. This work was supported by United Silicon Carbide, Inc. under the Army TACOM SBIR program (Contract DAAE07-02-C-L050), managed by Dr. T. Burke. The review of this letter was arranged by Editor J. Sin.",

year = "2003",

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doi = "https://doi.org/10.1109/LED.2003.812531",

language = "American English",

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T1 - A high current gain 4H-SiC NPN power bipolar junction transistor

AU - Zhang, Jianhui

AU - Luo, Yanbin

AU - Alexandrov, Petre

AU - Fursin, Leonid

AU - Zhao, Jian H.

N1 - Funding Information: Manuscript received February 21, 2003. This work was supported by United Silicon Carbide, Inc. under the Army TACOM SBIR program (Contract DAAE07-02-C-L050), managed by Dr. T. Burke. The review of this letter was arranged by Editor J. Sin.

PY - 2003/5

Y1 - 2003/5

N2 - This letter reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150°C. The transistor blocks larger than 480 V and conducts 2.1 A (Jc = 239 A/cm2) at Vce = 3.4 V, corresponding to a specific on-resistance (Rsp-on) of 14 mΩcm2, based on a drift layer design of 12 μm doped to 6 × 1015 cm-3. Current gain β ≥ 35 has been achieved for collector current densities ranging from Jc = 40 A/cm2 to 239 A/cm2 (Ic = 2.1 A) with a peak current gain of 38 at Jc = 114 A/cm2.

AB - This letter reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150°C. The transistor blocks larger than 480 V and conducts 2.1 A (Jc = 239 A/cm2) at Vce = 3.4 V, corresponding to a specific on-resistance (Rsp-on) of 14 mΩcm2, based on a drift layer design of 12 μm doped to 6 × 1015 cm-3. Current gain β ≥ 35 has been achieved for collector current densities ranging from Jc = 40 A/cm2 to 239 A/cm2 (Ic = 2.1 A) with a peak current gain of 38 at Jc = 114 A/cm2.

KW - Bipolar junction transistors (BJTs)

KW - Power transistors

KW - Silicon carbide

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DO - https://doi.org/10.1109/LED.2003.812531

M3 - Article

SN - 0193-8576

VL - 24

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EP - 329

JO - Electron device letters

JF - Electron device letters

IS - 5

ER -

A high current gain 4H-SiC NPN power bipolar junction transistor

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ASJC Scopus subject areas

Keywords

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