A Large Anisotropic Enhancement of the Charge Carrier Mobility of Flexible Organic Transistors with Strain: A Hall Effect and Raman Study

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Abstract

Utilizing the intrinsic mobility–strain relationship in semiconductors is critical for enabling strain engineering applications in high-performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are reported. This study reveals a very strong, anisotropic, and reversible modulation of the intrinsic (trap-free) charge carrier mobility of single-crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. Consistently, Raman spectroscopy reveals a systematic shift of the low-frequency Raman modes of rubrene to higher (lower) frequencies with compressive (tensile) strain, which is indicative of a reduction (enhancement) of thermal molecular disorder in the crystal with strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier mobility, low-frequency vibrational modes, strain, and molecular disorder in organic semiconductors.

Original languageEnglish (US)
Article number1901824
JournalAdvanced Science
Volume7
Issue number1
DOIs
StatePublished - Jan 1 2020

Fingerprint

Semiconductors
Carrier mobility
Hall effect
carrier mobility
Charge carriers
charge carriers
Transistors
transistors
organic semiconductors
low frequencies
augmentation
engineering
disorders
Raman Spectrum Analysis
Semiconducting organic compounds
electronics
vibration mode
Raman spectroscopy
Hot Temperature
traps

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)
  • Chemical Engineering(all)
  • Biochemistry, Genetics and Molecular Biology (miscellaneous)
  • Materials Science(all)
  • Medicine (miscellaneous)

Keywords

  • Raman
  • flexible electronics
  • mobility
  • organic transistors
  • strain

Cite this

@article{1a1a119fafb54f0097810a3a5e0c9e40,
title = "A Large Anisotropic Enhancement of the Charge Carrier Mobility of Flexible Organic Transistors with Strain: A Hall Effect and Raman Study",
abstract = "Utilizing the intrinsic mobility–strain relationship in semiconductors is critical for enabling strain engineering applications in high-performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are reported. This study reveals a very strong, anisotropic, and reversible modulation of the intrinsic (trap-free) charge carrier mobility of single-crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100{\%} with only 1{\%} of compressive strain. Consistently, Raman spectroscopy reveals a systematic shift of the low-frequency Raman modes of rubrene to higher (lower) frequencies with compressive (tensile) strain, which is indicative of a reduction (enhancement) of thermal molecular disorder in the crystal with strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier mobility, low-frequency vibrational modes, strain, and molecular disorder in organic semiconductors.",
keywords = "Raman, flexible electronics, mobility, organic transistors, strain",
author = "Vitaly Podzorov",
year = "2020",
month = "1",
day = "1",
doi = "https://doi.org/10.1002/advs.201901824",
language = "English (US)",
volume = "7",
journal = "Advanced Science",
issn = "2198-3844",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - A Large Anisotropic Enhancement of the Charge Carrier Mobility of Flexible Organic Transistors with Strain

T2 - A Hall Effect and Raman Study

AU - Podzorov, Vitaly

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Utilizing the intrinsic mobility–strain relationship in semiconductors is critical for enabling strain engineering applications in high-performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are reported. This study reveals a very strong, anisotropic, and reversible modulation of the intrinsic (trap-free) charge carrier mobility of single-crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. Consistently, Raman spectroscopy reveals a systematic shift of the low-frequency Raman modes of rubrene to higher (lower) frequencies with compressive (tensile) strain, which is indicative of a reduction (enhancement) of thermal molecular disorder in the crystal with strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier mobility, low-frequency vibrational modes, strain, and molecular disorder in organic semiconductors.

AB - Utilizing the intrinsic mobility–strain relationship in semiconductors is critical for enabling strain engineering applications in high-performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are reported. This study reveals a very strong, anisotropic, and reversible modulation of the intrinsic (trap-free) charge carrier mobility of single-crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. Consistently, Raman spectroscopy reveals a systematic shift of the low-frequency Raman modes of rubrene to higher (lower) frequencies with compressive (tensile) strain, which is indicative of a reduction (enhancement) of thermal molecular disorder in the crystal with strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier mobility, low-frequency vibrational modes, strain, and molecular disorder in organic semiconductors.

KW - Raman

KW - flexible electronics

KW - mobility

KW - organic transistors

KW - strain

UR - http://www.scopus.com/inward/record.url?scp=85075029704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85075029704&partnerID=8YFLogxK

U2 - https://doi.org/10.1002/advs.201901824

DO - https://doi.org/10.1002/advs.201901824

M3 - Article

VL - 7

JO - Advanced Science

JF - Advanced Science

SN - 2198-3844

IS - 1

M1 - 1901824

ER -