A low-disorder metal-oxide-silicon double quantum dot

J. S. Kim, T. M. Hazard, Andrew Addison Houck, Stephen Aplin Lyon

Research output: Contribution to journalArticle

Abstract

One of the biggest challenges impeding the progress of metal-oxide-silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO2 interface which interferes with controllably confining single and few electrons. In this work, we have engineered a low-disorder MOS quantum double-dot device with critical electron densities, i.e., the lowest electron density required to support a conducting pathway, approaching critical electron densities reported in high quality Si/SiGe devices and commensurate with the lowest critical densities reported in any MOS device. Utilizing a nearby charge sensor, we show that the device can be tuned to the single-electron regime where charging energies of 8 meV are measured in both dots, consistent with the lithographic size of the dot. Probing a wide voltage range with our quantum dots and charge sensor, we detect three distinct electron traps, corresponding to a defect density consistent with the ensemble measured critical density. Low frequency charge noise measurements at 300 mK indicate a 1/f noise spectrum of 3.4 μeV/Hz1/2 at 1 Hz and magnetospectroscopy measurements yield a valley splitting of 110 ± 26 μeV. This work demonstrates that reproducible MOS spin qubits are feasible and represent a platform for scaling to larger qubit systems in MOS.

Original languageEnglish (US)
Article number043501
JournalApplied Physics Letters
Volume114
Issue number4
DOIs
StatePublished - Jan 28 2019

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metal oxides
quantum dots
disorders
silicon
electrons
sensors
noise spectra
noise measurement
confining
valleys
charging
platforms
traps
low frequencies
scaling
conduction
defects
electric potential
energy

Cite this

@article{7154a4c4323c4e94a6dc5c74cbd1835c,
title = "A low-disorder metal-oxide-silicon double quantum dot",
abstract = "One of the biggest challenges impeding the progress of metal-oxide-silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO2 interface which interferes with controllably confining single and few electrons. In this work, we have engineered a low-disorder MOS quantum double-dot device with critical electron densities, i.e., the lowest electron density required to support a conducting pathway, approaching critical electron densities reported in high quality Si/SiGe devices and commensurate with the lowest critical densities reported in any MOS device. Utilizing a nearby charge sensor, we show that the device can be tuned to the single-electron regime where charging energies of 8 meV are measured in both dots, consistent with the lithographic size of the dot. Probing a wide voltage range with our quantum dots and charge sensor, we detect three distinct electron traps, corresponding to a defect density consistent with the ensemble measured critical density. Low frequency charge noise measurements at 300 mK indicate a 1/f noise spectrum of 3.4 μeV/Hz1/2 at 1 Hz and magnetospectroscopy measurements yield a valley splitting of 110 ± 26 μeV. This work demonstrates that reproducible MOS spin qubits are feasible and represent a platform for scaling to larger qubit systems in MOS.",
author = "Kim, {J. S.} and Hazard, {T. M.} and Houck, {Andrew Addison} and Lyon, {Stephen Aplin}",
year = "2019",
month = "1",
day = "28",
doi = "https://doi.org/10.1063/1.5075486",
language = "English (US)",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

A low-disorder metal-oxide-silicon double quantum dot. / Kim, J. S.; Hazard, T. M.; Houck, Andrew Addison; Lyon, Stephen Aplin.

In: Applied Physics Letters, Vol. 114, No. 4, 043501, 28.01.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A low-disorder metal-oxide-silicon double quantum dot

AU - Kim, J. S.

AU - Hazard, T. M.

AU - Houck, Andrew Addison

AU - Lyon, Stephen Aplin

PY - 2019/1/28

Y1 - 2019/1/28

N2 - One of the biggest challenges impeding the progress of metal-oxide-silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO2 interface which interferes with controllably confining single and few electrons. In this work, we have engineered a low-disorder MOS quantum double-dot device with critical electron densities, i.e., the lowest electron density required to support a conducting pathway, approaching critical electron densities reported in high quality Si/SiGe devices and commensurate with the lowest critical densities reported in any MOS device. Utilizing a nearby charge sensor, we show that the device can be tuned to the single-electron regime where charging energies of 8 meV are measured in both dots, consistent with the lithographic size of the dot. Probing a wide voltage range with our quantum dots and charge sensor, we detect three distinct electron traps, corresponding to a defect density consistent with the ensemble measured critical density. Low frequency charge noise measurements at 300 mK indicate a 1/f noise spectrum of 3.4 μeV/Hz1/2 at 1 Hz and magnetospectroscopy measurements yield a valley splitting of 110 ± 26 μeV. This work demonstrates that reproducible MOS spin qubits are feasible and represent a platform for scaling to larger qubit systems in MOS.

AB - One of the biggest challenges impeding the progress of metal-oxide-silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO2 interface which interferes with controllably confining single and few electrons. In this work, we have engineered a low-disorder MOS quantum double-dot device with critical electron densities, i.e., the lowest electron density required to support a conducting pathway, approaching critical electron densities reported in high quality Si/SiGe devices and commensurate with the lowest critical densities reported in any MOS device. Utilizing a nearby charge sensor, we show that the device can be tuned to the single-electron regime where charging energies of 8 meV are measured in both dots, consistent with the lithographic size of the dot. Probing a wide voltage range with our quantum dots and charge sensor, we detect three distinct electron traps, corresponding to a defect density consistent with the ensemble measured critical density. Low frequency charge noise measurements at 300 mK indicate a 1/f noise spectrum of 3.4 μeV/Hz1/2 at 1 Hz and magnetospectroscopy measurements yield a valley splitting of 110 ± 26 μeV. This work demonstrates that reproducible MOS spin qubits are feasible and represent a platform for scaling to larger qubit systems in MOS.

UR - http://www.scopus.com/inward/record.url?scp=85060930628&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060930628&partnerID=8YFLogxK

U2 - https://doi.org/10.1063/1.5075486

DO - https://doi.org/10.1063/1.5075486

M3 - Article

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043501

ER -