Abstract
Computational modeling and simulation are employed to study a rotating susceptor vertical impinging chemical vapor deposition (CVD) reactor to predict GaN film deposition. Many metal-organic chemical vapor deposition reactor manufacturers use prior experience to design and fabricate CVD reactors without a fundamental basis for the process and information on the optimal conditions for the deposition. Through trial and error, they fine tune the gas flow parameters, heater temperatures, chamber pressure, and concentration of species gases for optimal growth. However, expensive raw precursor gas and time are wasted through this method. A computational model is an important step in the CVD reactor design and GaN growth prediction. It can be used to model and optimize the reactor to yield favorable operating conditions. In this paper, a simple geometry consisting of a rotating susceptor and flow guide is considered. The focus is on gallium nitride (GaN) thin films. The study shows how the computational model can benefit reactor design. It also presents comparisons between model prediction results and experimental data from a physical, practical, system. Commercially available software is used, with appropriate modifications, and the results obtained are discussed in detail.
| Original language | English (US) |
|---|---|
| Article number | 011001 |
| Journal | Journal of Manufacturing Science and Engineering, Transactions of the ASME |
| Volume | 142 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1 2020 |
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All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Computer Science Applications
Keywords
- Advanced materials and processing
- Deposition
- Gallium nitride
- Modeling and simulation
- Nontraditional manufacturing processes
- Thin films
Cite this
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A Numerical and Experimental Study on the Fabrication GaN Films by Chemical Vapor Deposition. / Wong, Sun; Jaluria, Yogesh.
In: Journal of Manufacturing Science and Engineering, Transactions of the ASME, Vol. 142, No. 1, 011001, 01.01.2020.Research output: Contribution to journal › Article
TY - JOUR
T1 - A Numerical and Experimental Study on the Fabrication GaN Films by Chemical Vapor Deposition
AU - Wong, Sun
AU - Jaluria, Yogesh
PY - 2020/1/1
Y1 - 2020/1/1
N2 - Computational modeling and simulation are employed to study a rotating susceptor vertical impinging chemical vapor deposition (CVD) reactor to predict GaN film deposition. Many metal-organic chemical vapor deposition reactor manufacturers use prior experience to design and fabricate CVD reactors without a fundamental basis for the process and information on the optimal conditions for the deposition. Through trial and error, they fine tune the gas flow parameters, heater temperatures, chamber pressure, and concentration of species gases for optimal growth. However, expensive raw precursor gas and time are wasted through this method. A computational model is an important step in the CVD reactor design and GaN growth prediction. It can be used to model and optimize the reactor to yield favorable operating conditions. In this paper, a simple geometry consisting of a rotating susceptor and flow guide is considered. The focus is on gallium nitride (GaN) thin films. The study shows how the computational model can benefit reactor design. It also presents comparisons between model prediction results and experimental data from a physical, practical, system. Commercially available software is used, with appropriate modifications, and the results obtained are discussed in detail.
AB - Computational modeling and simulation are employed to study a rotating susceptor vertical impinging chemical vapor deposition (CVD) reactor to predict GaN film deposition. Many metal-organic chemical vapor deposition reactor manufacturers use prior experience to design and fabricate CVD reactors without a fundamental basis for the process and information on the optimal conditions for the deposition. Through trial and error, they fine tune the gas flow parameters, heater temperatures, chamber pressure, and concentration of species gases for optimal growth. However, expensive raw precursor gas and time are wasted through this method. A computational model is an important step in the CVD reactor design and GaN growth prediction. It can be used to model and optimize the reactor to yield favorable operating conditions. In this paper, a simple geometry consisting of a rotating susceptor and flow guide is considered. The focus is on gallium nitride (GaN) thin films. The study shows how the computational model can benefit reactor design. It also presents comparisons between model prediction results and experimental data from a physical, practical, system. Commercially available software is used, with appropriate modifications, and the results obtained are discussed in detail.
KW - Advanced materials and processing
KW - Deposition
KW - Gallium nitride
KW - Modeling and simulation
KW - Nontraditional manufacturing processes
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=85074561985&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85074561985&partnerID=8YFLogxK
U2 - https://doi.org/10.1115/1.4044712
DO - https://doi.org/10.1115/1.4044712
M3 - Article
VL - 142
JO - Journal of Manufacturing Science and Engineering, Transactions of the ASME
JF - Journal of Manufacturing Science and Engineering, Transactions of the ASME
SN - 1087-1357
IS - 1
M1 - 011001
ER -