TY - GEN
T1 - Accurate and Compact Small-Signal Modeling of Zinc-Oxide Thin-Film Transistors for Operation in the GHz Regime
AU - Ma, Yue
AU - Ma, Xiaoyang
AU - Wagner, Sigurd
AU - Verma, Naveen
AU - Sturm, James C.
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Large-area electronic (LAE) thin-film transistors (TFTs) with GHz operation frequencies have enabled LAE-based wireless systems [1]. This motivates accurate modeling of GHz TFTs, but existing approaches are limited for two reasons [2] , [3] : (1) analytical models with numerous parameters are impractical for simulating complex circuits and systems; (2) important losses in the GHz regime are overlooked. Therefore, a non-quasi-static small-signal model has been proposed for GHz zinc-oxide (ZnO) TFTs [1]. However, to match measurements, this model requires an unrealistic value for gate resistance R G , which is a key frequency-limiting factor. Here we present an accurate and compact small-signal TFT model that includes losses from channel resistance, which are shown to be critical to GHz TFT performance. With physically realistic parameter values, this approach can precisely model GHz ZnO TFTs in both linear and saturation regimes. The model illuminates that reducing channel resistance losses is the key to raising the TFT's operation frequency.
AB - Large-area electronic (LAE) thin-film transistors (TFTs) with GHz operation frequencies have enabled LAE-based wireless systems [1]. This motivates accurate modeling of GHz TFTs, but existing approaches are limited for two reasons [2] , [3] : (1) analytical models with numerous parameters are impractical for simulating complex circuits and systems; (2) important losses in the GHz regime are overlooked. Therefore, a non-quasi-static small-signal model has been proposed for GHz zinc-oxide (ZnO) TFTs [1]. However, to match measurements, this model requires an unrealistic value for gate resistance R G , which is a key frequency-limiting factor. Here we present an accurate and compact small-signal TFT model that includes losses from channel resistance, which are shown to be critical to GHz TFT performance. With physically realistic parameter values, this approach can precisely model GHz ZnO TFTs in both linear and saturation regimes. The model illuminates that reducing channel resistance losses is the key to raising the TFT's operation frequency.
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U2 - 10.1109/DRC61706.2024.10605272
DO - 10.1109/DRC61706.2024.10605272
M3 - Conference contribution
T3 - Device Research Conference - Conference Digest, DRC
BT - DRC 2024 - 82nd Device Research Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 82nd Device Research Conference, DRC 2024
Y2 - 24 June 2024 through 26 June 2024
ER -