Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition

TY - JOUR

T1 - Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition

AU - Zhao, J. H.

AU - Lu, Z.

AU - Buchwald, W.

AU - Coblentz, D.

AU - McAfee, S.

PY - 1993

Y1 - 1993

N2 - A set of sulfur-doped low pressure metalorganic vapor phase epitaxy InP/InGaAsP single quantum wells have been studied by admittance spectroscopy and a variety of other techniques. Admittance spectroscopy allows the studies of carrier emission from both the sulfur shallow impurity state and a quantum well which is seen to behave like a giant trap. The electron emission rates will be reported and the sulfur shallow impurity level is found to be 10 meV, in agreement with a simple theoretical calculation.

AB - A set of sulfur-doped low pressure metalorganic vapor phase epitaxy InP/InGaAsP single quantum wells have been studied by admittance spectroscopy and a variety of other techniques. Admittance spectroscopy allows the studies of carrier emission from both the sulfur shallow impurity state and a quantum well which is seen to behave like a giant trap. The electron emission rates will be reported and the sulfur shallow impurity level is found to be 10 meV, in agreement with a simple theoretical calculation.

UR - http://www.scopus.com/inward/record.url?scp=0041104284&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041104284&partnerID=8YFLogxK

U2 - https://doi.org/10.1063/1.109217

DO - https://doi.org/10.1063/1.109217

M3 - Article

SN - 0003-6951

VL - 62

SP - 2810

EP - 2812

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -