Alignment mark materials for projection electron lithography

R. C. Farrow, J. A. Liddle, S. D. Berger, H. A. Huggins, J. S. Kraus, R. M. Camarda, R. G. Tarascon, L. Fetter

Research output: Contribution to conferencePaper

Abstract

The use of a non-imaging mark detection scheme based on the backscatter electron (BSE) contrast for detecting correct alignment condition in projection electron lithography is evaluated. Numerical calculations are carried out to analyze the applicability and accuracy of the BSE theory. Micrograph data of silicon-on-insulator devices are also presented.

Original languageEnglish (US)
Pages712-713
Number of pages2
StatePublished - Dec 1 1994
EventProceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA
Duration: Jul 31 1994Aug 5 1994

Other

OtherProceedings of the 52nd Annual Meeting of the Microscopy Society of America
CityNew Orleans, LA, USA
Period7/31/948/5/94

Fingerprint

Electron beam lithography
Electrons
Silicon

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Farrow, R. C., Liddle, J. A., Berger, S. D., Huggins, H. A., Kraus, J. S., Camarda, R. M., ... Fetter, L. (1994). Alignment mark materials for projection electron lithography. 712-713. Paper presented at Proceedings of the 52nd Annual Meeting of the Microscopy Society of America, New Orleans, LA, USA, .
Farrow, R. C. ; Liddle, J. A. ; Berger, S. D. ; Huggins, H. A. ; Kraus, J. S. ; Camarda, R. M. ; Tarascon, R. G. ; Fetter, L. / Alignment mark materials for projection electron lithography. Paper presented at Proceedings of the 52nd Annual Meeting of the Microscopy Society of America, New Orleans, LA, USA, .2 p.
@conference{46af323e4dde4371865bb625f7708a10,
title = "Alignment mark materials for projection electron lithography",
abstract = "The use of a non-imaging mark detection scheme based on the backscatter electron (BSE) contrast for detecting correct alignment condition in projection electron lithography is evaluated. Numerical calculations are carried out to analyze the applicability and accuracy of the BSE theory. Micrograph data of silicon-on-insulator devices are also presented.",
author = "Farrow, {R. C.} and Liddle, {J. A.} and Berger, {S. D.} and Huggins, {H. A.} and Kraus, {J. S.} and Camarda, {R. M.} and Tarascon, {R. G.} and L. Fetter",
year = "1994",
month = "12",
day = "1",
language = "English (US)",
pages = "712--713",
note = "Proceedings of the 52nd Annual Meeting of the Microscopy Society of America ; Conference date: 31-07-1994 Through 05-08-1994",

}

Farrow, RC, Liddle, JA, Berger, SD, Huggins, HA, Kraus, JS, Camarda, RM, Tarascon, RG & Fetter, L 1994, 'Alignment mark materials for projection electron lithography', Paper presented at Proceedings of the 52nd Annual Meeting of the Microscopy Society of America, New Orleans, LA, USA, 7/31/94 - 8/5/94 pp. 712-713.

Alignment mark materials for projection electron lithography. / Farrow, R. C.; Liddle, J. A.; Berger, S. D.; Huggins, H. A.; Kraus, J. S.; Camarda, R. M.; Tarascon, R. G.; Fetter, L.

1994. 712-713 Paper presented at Proceedings of the 52nd Annual Meeting of the Microscopy Society of America, New Orleans, LA, USA, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Alignment mark materials for projection electron lithography

AU - Farrow, R. C.

AU - Liddle, J. A.

AU - Berger, S. D.

AU - Huggins, H. A.

AU - Kraus, J. S.

AU - Camarda, R. M.

AU - Tarascon, R. G.

AU - Fetter, L.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The use of a non-imaging mark detection scheme based on the backscatter electron (BSE) contrast for detecting correct alignment condition in projection electron lithography is evaluated. Numerical calculations are carried out to analyze the applicability and accuracy of the BSE theory. Micrograph data of silicon-on-insulator devices are also presented.

AB - The use of a non-imaging mark detection scheme based on the backscatter electron (BSE) contrast for detecting correct alignment condition in projection electron lithography is evaluated. Numerical calculations are carried out to analyze the applicability and accuracy of the BSE theory. Micrograph data of silicon-on-insulator devices are also presented.

UR - http://www.scopus.com/inward/record.url?scp=0028737384&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028737384&partnerID=8YFLogxK

M3 - Paper

SP - 712

EP - 713

ER -

Farrow RC, Liddle JA, Berger SD, Huggins HA, Kraus JS, Camarda RM et al. Alignment mark materials for projection electron lithography. 1994. Paper presented at Proceedings of the 52nd Annual Meeting of the Microscopy Society of America, New Orleans, LA, USA, .