Alignment mark materials for projection electron lithography

R. C. Farrow, J. A. Liddle, S. D. Berger, H. A. Huggins, J. S. Kraus, R. M. Camarda, R. G. Tarascon, L. Fetter

Research output: Contribution to conferencePaper

Abstract

The use of a non-imaging mark detection scheme based on the backscatter electron (BSE) contrast for detecting correct alignment condition in projection electron lithography is evaluated. Numerical calculations are carried out to analyze the applicability and accuracy of the BSE theory. Micrograph data of silicon-on-insulator devices are also presented.

Original languageEnglish (US)
Pages712-713
Number of pages2
StatePublished - Dec 1 1994
EventProceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA
Duration: Jul 31 1994Aug 5 1994

Other

OtherProceedings of the 52nd Annual Meeting of the Microscopy Society of America
CityNew Orleans, LA, USA
Period7/31/948/5/94

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Farrow, R. C., Liddle, J. A., Berger, S. D., Huggins, H. A., Kraus, J. S., Camarda, R. M., Tarascon, R. G., & Fetter, L. (1994). Alignment mark materials for projection electron lithography. 712-713. Paper presented at Proceedings of the 52nd Annual Meeting of the Microscopy Society of America, New Orleans, LA, USA, .