Analysis of passive memristive devices array: Data-dependent statistical model and self-adaptable sense resistance for RRAMs

TY - JOUR

T1 - Analysis of passive memristive devices array

T2 - Data-dependent statistical model and self-adaptable sense resistance for RRAMs

AU - Shin, Sangho

AU - Kim, Kyungmin

AU - Kang, Sung Mo

N1 - Funding Information: Manuscript received September 15, 2010; accepted August 1, 2011. Date of publication October 19, 2011; date of current version May 10, 2012. This work was supported in part by the University of California, Merced and Santa Cruz. The authors are with the School of Engineering, University of California, Santa Cruz, CA 95060 USA (e-mail: [email protected]; [email protected]; [email protected]).

PY - 2012/6

Y1 - 2012/6

N2 - In this paper, a 2 × 2 equivalent statistical circuit model is presented to deal with sneak currents and random data distributions for design and analysis of n × m passive memory arrays of memristive devices. This data-dependent 2 × 2 model enables a broad range of analysis, such as the optimum detection voltage margin, with computational efficiency and no limit on the memory array size. We propose self-adaptable sense resistors that can find their statistical optimum values for reading stored data patterns by composing them with either a replica of a part of resistive random access memory (RRAM) array or a part of RRAM array itself. Self-adaptable resistors can increase the average voltage detection margin by 46%, and reduce the average current consumption by 14% for the case of a 128 \times 128 passive array with off-to-on resistance ratio of 103.

AB - In this paper, a 2 × 2 equivalent statistical circuit model is presented to deal with sneak currents and random data distributions for design and analysis of n × m passive memory arrays of memristive devices. This data-dependent 2 × 2 model enables a broad range of analysis, such as the optimum detection voltage margin, with computational efficiency and no limit on the memory array size. We propose self-adaptable sense resistors that can find their statistical optimum values for reading stored data patterns by composing them with either a replica of a part of resistive random access memory (RRAM) array or a part of RRAM array itself. Self-adaptable resistors can increase the average voltage detection margin by 46%, and reduce the average current consumption by 14% for the case of a 128 \times 128 passive array with off-to-on resistance ratio of 103.

UR - https://www.scopus.com/pages/publications/84861192414

UR - https://www.scopus.com/pages/publications/84861192414#tab=citedBy

U2 - 10.1109/JPROC.2011.2165690

DO - 10.1109/JPROC.2011.2165690

M3 - Article

SN - 0018-9219

VL - 100

SP - 2021

EP - 2032

JO - Proceedings of the IEEE

JF - Proceedings of the IEEE

IS - 6

M1 - 6053988

ER -