Anomalous enhancement of the electron dephasing rate from magnetoresistance data in Bi2Sr2CuO6

TY - JOUR

T1 - Anomalous enhancement of the electron dephasing rate from magnetoresistance data in Bi2Sr2CuO6

AU - Jing, T. W.

AU - Ong, N. P.

AU - Ramakrishnan, T. V.

AU - Tarascon, J. M.

AU - Remschnig, K.

PY - 1991

Y1 - 1991

N2 - The low-temperature magnetoresistance (MR) in Bi2Sr2CuO6 is highly anisotropic. By fitting the orbital MR with the weak-localization expression, we derive a carrier dephasing rate 1 that varies as T-13. This implies that the energy levels are greatly broadened at low temperatures. Both the energy scale derived from 1 vs T and the behavior of the longitudinal MR suggest a strong coupling between the holes and the Cu spins. We discuss implications of the large dephasing rate, and contrast the MR with that of conventional disordered metals.

AB - The low-temperature magnetoresistance (MR) in Bi2Sr2CuO6 is highly anisotropic. By fitting the orbital MR with the weak-localization expression, we derive a carrier dephasing rate 1 that varies as T-13. This implies that the energy levels are greatly broadened at low temperatures. Both the energy scale derived from 1 vs T and the behavior of the longitudinal MR suggest a strong coupling between the holes and the Cu spins. We discuss implications of the large dephasing rate, and contrast the MR with that of conventional disordered metals.

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U2 - 10.1103/PhysRevLett.67.761

DO - 10.1103/PhysRevLett.67.761

M3 - Article

C2 - 10044982

SN - 0031-9007

VL - 67

SP - 761

EP - 764

JO - Physical review letters

JF - Physical review letters

IS - 6

ER -