Antiferroelectric topological insulators in orthorhombic AMgBi Compounds (A=Li, Na, K)

Bartomeu Monserrat; Joseph W. Bennett; Karin M. Rabe; David Vanderbilt

doi:10.1103/PhysRevLett.119.036802

Antiferroelectric topological insulators in orthorhombic AMgBi Compounds (A=Li, Na, K)

Bartomeu Monserrat
, Joseph W. Bennett
, Karin M. Rabe
, David Vanderbilt

School of Arts and Sciences, New High Energy Theory Center

Rutgers, The State University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an ABC family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these ABC compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.

Original language	American English
Article number	036802
Journal	Physical review letters
Volume	119
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevLett.119.036802
State	Published - Jul 21 2017

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.119.036802

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abstract = "We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an ABC family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these ABC compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.",

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AU - Vanderbilt, David

PY - 2017/7/21

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N2 - We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an ABC family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these ABC compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.

AB - We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an ABC family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these ABC compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.

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Antiferroelectric topological insulators in orthorhombic AMgBi Compounds (A=Li, Na, K)

Abstract

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