Atomic resolution EELS analysis of a misfit dislocation at a GeSi/Si interface

TY - JOUR

T1 - Atomic resolution EELS analysis of a misfit dislocation at a GeSi/Si interface

AU - Batson, P. E.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - A dissociated 60° misfit dislocation at the substrate interface of a Si/GexSi(1-x) heterojunction has been examined using EELS and ADF imaging. New spectra are obtained at the intrinsic stacking fault, at the dislocation cores and in the strained regions on either side of the stacking fault. A splitting of the L1 conduction band due to symmetry breaking at the stacking fault is observed. Near edge conduction band states are verified at the partial dislocation cores, but not at the stacking fault.

AB - A dissociated 60° misfit dislocation at the substrate interface of a Si/GexSi(1-x) heterojunction has been examined using EELS and ADF imaging. New spectra are obtained at the intrinsic stacking fault, at the dislocation cores and in the strained regions on either side of the stacking fault. A splitting of the L1 conduction band due to symmetry breaking at the stacking fault is observed. Near edge conduction band states are verified at the partial dislocation cores, but not at the stacking fault.

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U2 - https://doi.org/10.1016/S0921-4526(99)00581-5

DO - https://doi.org/10.1016/S0921-4526(99)00581-5

M3 - Conference article

SN - 0921-4526

VL - 273-274

SP - 593

EP - 597

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -