Atomic resolution EELS analysis of a misfit dislocation at a GeSi/Si interface

P. E. Batson

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


A dissociated 60° misfit dislocation at the substrate interface of a Si/GexSi(1-x) heterojunction has been examined using EELS and ADF imaging. New spectra are obtained at the intrinsic stacking fault, at the dislocation cores and in the strained regions on either side of the stacking fault. A splitting of the L1 conduction band due to symmetry breaking at the stacking fault is observed. Near edge conduction band states are verified at the partial dislocation cores, but not at the stacking fault.

Original languageEnglish (US)
Pages (from-to)593-597
Number of pages5
JournalPhysica B: Condensed Matter
StatePublished - Dec 15 1999
Externally publishedYes
EventProceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA
Duration: Jul 26 1999Jul 30 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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