B-doping and annealing on the properties of B and Ga co-doped ZnO films

Jian Huang, Yan Hu, Yuncheng Ma, Bing Li, Ke Tang, Haozhi Shi, Saifei Gou, Tianyu Zou, Linjun Wang, Yicheng Lu

Research output: Contribution to journalArticle

Abstract

Transparent conducting boron (B) and gallium (Ga) co-doped ZnO (BGZO) films were deposited by radio frequency (RF) magnetron sputtering. The influence of B-doping and annealing treatment on properties of BGZO films was investigated. The results indicate that all samples have hexagonal wurtzite structure with (002) preferential orientation and the film crystallinity is improved with increasing annealing temperature. The hall mobility of films increases and the carrier concentration decreases with the increasing of annealing temperature. The films also show red shift of the optical bandgap with the increasing of annealing temperature. The incorporation of B increases the thermal stability of electrical properties of the BGZO film.

Original languageEnglish (US)
Pages (from-to)223-227
Number of pages5
JournalSurface and Coatings Technology
Volume358
DOIs
StatePublished - Jan 25 2019
Externally publishedYes

Fingerprint

Gallium
gallium
Doping (additives)
Annealing
annealing
Hall mobility
Boron
Optical band gaps
red shift
wurtzite
Magnetron sputtering
Temperature
Carrier concentration
temperature
crystallinity
radio frequencies
magnetron sputtering
boron
Electric properties
Thermodynamic stability

Cite this

Huang, Jian ; Hu, Yan ; Ma, Yuncheng ; Li, Bing ; Tang, Ke ; Shi, Haozhi ; Gou, Saifei ; Zou, Tianyu ; Wang, Linjun ; Lu, Yicheng. / B-doping and annealing on the properties of B and Ga co-doped ZnO films. In: Surface and Coatings Technology. 2019 ; Vol. 358. pp. 223-227.
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abstract = "Transparent conducting boron (B) and gallium (Ga) co-doped ZnO (BGZO) films were deposited by radio frequency (RF) magnetron sputtering. The influence of B-doping and annealing treatment on properties of BGZO films was investigated. The results indicate that all samples have hexagonal wurtzite structure with (002) preferential orientation and the film crystallinity is improved with increasing annealing temperature. The hall mobility of films increases and the carrier concentration decreases with the increasing of annealing temperature. The films also show red shift of the optical bandgap with the increasing of annealing temperature. The incorporation of B increases the thermal stability of electrical properties of the BGZO film.",
author = "Jian Huang and Yan Hu and Yuncheng Ma and Bing Li and Ke Tang and Haozhi Shi and Saifei Gou and Tianyu Zou and Linjun Wang and Yicheng Lu",
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Huang, J, Hu, Y, Ma, Y, Li, B, Tang, K, Shi, H, Gou, S, Zou, T, Wang, L & Lu, Y 2019, 'B-doping and annealing on the properties of B and Ga co-doped ZnO films' Surface and Coatings Technology, vol. 358, pp. 223-227. https://doi.org/10.1016/j.surfcoat.2018.11.053

B-doping and annealing on the properties of B and Ga co-doped ZnO films. / Huang, Jian; Hu, Yan; Ma, Yuncheng; Li, Bing; Tang, Ke; Shi, Haozhi; Gou, Saifei; Zou, Tianyu; Wang, Linjun; Lu, Yicheng.

In: Surface and Coatings Technology, Vol. 358, 25.01.2019, p. 223-227.

Research output: Contribution to journalArticle

TY - JOUR

T1 - B-doping and annealing on the properties of B and Ga co-doped ZnO films

AU - Huang, Jian

AU - Hu, Yan

AU - Ma, Yuncheng

AU - Li, Bing

AU - Tang, Ke

AU - Shi, Haozhi

AU - Gou, Saifei

AU - Zou, Tianyu

AU - Wang, Linjun

AU - Lu, Yicheng

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Y1 - 2019/1/25

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AB - Transparent conducting boron (B) and gallium (Ga) co-doped ZnO (BGZO) films were deposited by radio frequency (RF) magnetron sputtering. The influence of B-doping and annealing treatment on properties of BGZO films was investigated. The results indicate that all samples have hexagonal wurtzite structure with (002) preferential orientation and the film crystallinity is improved with increasing annealing temperature. The hall mobility of films increases and the carrier concentration decreases with the increasing of annealing temperature. The films also show red shift of the optical bandgap with the increasing of annealing temperature. The incorporation of B increases the thermal stability of electrical properties of the BGZO film.

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