B-doping and annealing on the properties of B and Ga co-doped ZnO films

Jian Huang, Yan Hu, Yuncheng Ma, Bing Li, Ke Tang, Haozhi Shi, Saifei Gou, Tianyu Zou, Linjun Wang, Yicheng Lu

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Transparent conducting boron (B) and gallium (Ga) co-doped ZnO (BGZO) films were deposited by radio frequency (RF) magnetron sputtering. The influence of B-doping and annealing treatment on properties of BGZO films was investigated. The results indicate that all samples have hexagonal wurtzite structure with (002) preferential orientation and the film crystallinity is improved with increasing annealing temperature. The hall mobility of films increases and the carrier concentration decreases with the increasing of annealing temperature. The films also show red shift of the optical bandgap with the increasing of annealing temperature. The incorporation of B increases the thermal stability of electrical properties of the BGZO film.

Original languageEnglish (US)
Pages (from-to)223-227
Number of pages5
JournalSurface and Coatings Technology
Volume358
DOIs
StatePublished - Jan 25 2019

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Chemistry(all)
  • Surfaces and Interfaces

Keywords

  • Annealing
  • Boron
  • Magnetron sputtering
  • ZnO

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