Band gap of epitaxial in-plane-dimerized single-phase NbO2 films

Agham B. Posadas, Andrew O'Hara, Sylvie Rangan, Robert A. Bartynski, Alexander A. Demkov

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


We demonstrate the epitaxial growth of high quality crystalline phase-pure NbO2 films on various oxide substrates using molecular beam epitaxy. Using a combination of reflection high-energy electron diffraction and x-ray diffraction we show that the films grow with the pseudo-rutile (100) orientation out of plane. The band gap of the NbO2 films is determined to be at least 1.0 eV using a combination of x-ray photoelectron spectroscopy and inverse photoelectron spectroscopy, in conjunction with hybrid density functional calculations of the density of states.

Original languageEnglish (US)
Article number092901
JournalApplied Physics Letters
Issue number9
StatePublished - Mar 3 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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