Band gap of epitaxial in-plane-dimerized single-phase NbO2 films

Agham B. Posadas, Andrew O'Hara, Sylvie Rangan, Robert A. Bartynski, Alexander A. Demkov

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We demonstrate the epitaxial growth of high quality crystalline phase-pure NbO2 films on various oxide substrates using molecular beam epitaxy. Using a combination of reflection high-energy electron diffraction and x-ray diffraction we show that the films grow with the pseudo-rutile (100) orientation out of plane. The band gap of the NbO2 films is determined to be at least 1.0 eV using a combination of x-ray photoelectron spectroscopy and inverse photoelectron spectroscopy, in conjunction with hybrid density functional calculations of the density of states.

Original languageEnglish (US)
Article number092901
JournalApplied Physics Letters
Volume104
Issue number9
DOIs
StatePublished - Mar 3 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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