Bias temperature instability and its correlation to flicker (1/f) noise in FinFETs

Y. M. Ding, D. Misra, P. Srinivasan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Flicker noise is used as a diagnostic tool to analyze the degradation mechanism before and after BTI in thin and thick gate oxide FinFETs. Although nFETs show lower BTI than pFETs for thick gate oxides, comparable BTI degradation is noticed between thin gate oxide nFETs and pFETs. Analyses of noise spectra reveal that: the degradation of oxide occurs closer to metal gate rather than channel during BTI. The distance between the defect location and channel plays an important role in noise mechanism for nMOS. As the defects are closer to the channel and coulombic scattering is enhanced, the noise in nFETs is modified from carrier number fluctuation to mobility fluctuation model.

Original languageEnglish (US)
Title of host publicationProceedings of the 2016 IEEE International Integrated Reliability Workshop, IIRW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages103-106
Number of pages4
ISBN (Electronic)9781509041923
DOIs
StatePublished - Apr 19 2017
Event2016 IEEE International Integrated Reliability Workshop, IIRW 2016 - S. Lake Tahoe, United States
Duration: Oct 9 2016Oct 13 2016

Publication series

NameProceedings of the 2016 IEEE International Integrated Reliability Workshop, IIRW 2016

Other

Other2016 IEEE International Integrated Reliability Workshop, IIRW 2016
CountryUnited States
CityS. Lake Tahoe
Period10/9/1610/13/16

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All Science Journal Classification (ASJC) codes

  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Keywords

  • BTI
  • FinFETs
  • Flicker noise
  • defects
  • dielectric
  • high-k

Cite this

Ding, Y. M., Misra, D., & Srinivasan, P. (2017). Bias temperature instability and its correlation to flicker (1/f) noise in FinFETs. In Proceedings of the 2016 IEEE International Integrated Reliability Workshop, IIRW 2016 (pp. 103-106). [7904913] (Proceedings of the 2016 IEEE International Integrated Reliability Workshop, IIRW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2016.7904913