Abstract
This paper deals with continuous chemical vapor deposition of silicon in a horizontal cold wall reactor, focusing on a moving susceptor. A two-dimensional numerical model, accounting for variable properties, thermal diffusion, radiative exchange among surfaces, and conjugate heat transfer between the gas and susceptor, is developed and validated. Scale analysis for the susceptor energy balance makes it possible to identify the characteristic parameters and infer their qualitative effects a priori, which proves to be consistent with numerical predictions. The results show that the present continuous system is characterized by two newly defined parameters: conductance ratio and susceptor parameter. A pair of performance curves that relate the deposition efficiency to each parameter successfully provide susceptor-related design conditions. It is also revealed that there exists an optimum length of heating zone that maximizes the deposition efficiency.
| Original language | American English |
|---|---|
| Pages (from-to) | 133-141 |
| Number of pages | 9 |
| Journal | American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD |
| Volume | 369 |
| Issue number | 6 |
| State | Published - 2001 |
| Event | 2001 ASME International Mechanical Engineering Congress and Exposition - New York, NY, United States Duration: Nov 11 2001 → Nov 16 2001 |
ASJC Scopus subject areas
- Mechanical Engineering
- Fluid Flow and Transfer Processes