Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate

Research output: Contribution to journalArticle

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Abstract

Charge-trapping properties of ultrathin gate oxide grown on a nitrogen-implanted silicon substrate were investigated using high-field Fowler-Nordheim injection. By applying an empirical model and monitoring threshold voltage shift due to current stress, it was found that both hole trapping and electron trapping are suppressed in the nitrogen-implanted oxide. Smaller trap-generation rate compared to pure SiO2 film was also noticed. Our results indicate that nitrogen implantation into silicon substrate before gate oxide growth is an alternate way to incorporate nitrogen into the Si/SiO2 interface.

Original languageEnglish (US)
Pages (from-to)2283-2285
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number15
DOIs
StatePublished - Oct 11 1999

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trapping
nitrogen
oxides
silicon
threshold voltage
implantation
traps
injection
shift
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Charge-trapping properties of ultrathin gate oxide grown on a nitrogen-implanted silicon substrate were investigated using high-field Fowler-Nordheim injection. By applying an empirical model and monitoring threshold voltage shift due to current stress, it was found that both hole trapping and electron trapping are suppressed in the nitrogen-implanted oxide. Smaller trap-generation rate compared to pure SiO2 film was also noticed. Our results indicate that nitrogen implantation into silicon substrate before gate oxide growth is an alternate way to incorporate nitrogen into the Si/SiO2 interface.",
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Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate. / Misra, Durgamadhab.

In: Applied Physics Letters, Vol. 75, No. 15, 11.10.1999, p. 2283-2285.

Research output: Contribution to journalArticle

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PY - 1999/10/11

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AB - Charge-trapping properties of ultrathin gate oxide grown on a nitrogen-implanted silicon substrate were investigated using high-field Fowler-Nordheim injection. By applying an empirical model and monitoring threshold voltage shift due to current stress, it was found that both hole trapping and electron trapping are suppressed in the nitrogen-implanted oxide. Smaller trap-generation rate compared to pure SiO2 film was also noticed. Our results indicate that nitrogen implantation into silicon substrate before gate oxide growth is an alternate way to incorporate nitrogen into the Si/SiO2 interface.

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