Chemical vapor deposition of HfO2 films on Si(100)

S. Sayan; S. Aravamudhan; B. W. Busch; W. H. Schulte; F. Cosandey; G. D. Wilk; E. Garfunkel

doi:10.1116/1.1450584

Chemical vapor deposition of HfO₂ films on Si(100)

S. Sayan, S. Aravamudhan, B. W. Busch, W. H. Schulte, F. Cosandey, G. D. Wilk, E. Garfunkel

Rutgers, The State University

Research output: Contribution to journal › Article › peer-review

94 Scopus citations

Abstract

An attempt to develop an industrially straightforward gate dielectric deposition process was presented by growing HfO₂ films on Si(100) using chemical vapor deposition. Sufficient oxygen was provided by the decomposition of the hafnium-tetra-tert-butoxide Hf(C₄H₉O)₄ precursor during deposition at ∼400°C to produce a stoichiometric HfO₂ film. The results showed that the measurements using various techniques agree to within ∼ 15% present a generally consistent picture of film structure and composition.

Original language	American English
Pages (from-to)	507-512
Number of pages	6
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	2
DOIs	https://doi.org/10.1116/1.1450584
State	Published - Mar 2002

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{14753dfff71f4db7a71e3870170026b6,

title = "Chemical vapor deposition of HfO2 films on Si(100)",

abstract = "An attempt to develop an industrially straightforward gate dielectric deposition process was presented by growing HfO2 films on Si(100) using chemical vapor deposition. Sufficient oxygen was provided by the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor during deposition at ∼400°C to produce a stoichiometric HfO2 film. The results showed that the measurements using various techniques agree to within ∼ 15% present a generally consistent picture of film structure and composition.",

author = "S. Sayan and S. Aravamudhan and Busch, {B. W.} and Schulte, {W. H.} and F. Cosandey and Wilk, {G. D.} and E. Garfunkel",

year = "2002",

month = mar,

doi = "10.1116/1.1450584",

language = "American English",

volume = "20",

pages = "507--512",

journal = "Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Chemical vapor deposition of HfO2 films on Si(100)

AU - Sayan, S.

AU - Aravamudhan, S.

AU - Busch, B. W.

AU - Schulte, W. H.

AU - Cosandey, F.

AU - Wilk, G. D.

AU - Garfunkel, E.

PY - 2002/3

Y1 - 2002/3

N2 - An attempt to develop an industrially straightforward gate dielectric deposition process was presented by growing HfO2 films on Si(100) using chemical vapor deposition. Sufficient oxygen was provided by the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor during deposition at ∼400°C to produce a stoichiometric HfO2 film. The results showed that the measurements using various techniques agree to within ∼ 15% present a generally consistent picture of film structure and composition.

AB - An attempt to develop an industrially straightforward gate dielectric deposition process was presented by growing HfO2 films on Si(100) using chemical vapor deposition. Sufficient oxygen was provided by the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor during deposition at ∼400°C to produce a stoichiometric HfO2 film. The results showed that the measurements using various techniques agree to within ∼ 15% present a generally consistent picture of film structure and composition.

UR - http://www.scopus.com/inward/record.url?scp=0036494032&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036494032&partnerID=8YFLogxK

U2 - 10.1116/1.1450584

DO - 10.1116/1.1450584

M3 - Article

SN - 0734-2101

VL - 20

SP - 507

EP - 512

JO - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

IS - 2

ER -

Chemical vapor deposition of HfO₂ films on Si(100)

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