Clustering analysis in boron and phosphorus implanted (100) germanium by x-ray absorption spectroscopy

M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll, C. A. King, Y. S. Suh, R. A. Levy, Temel Buyuklimanli, Mark Croft

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Recently, germanium based semiconductor device technology gained renewed interest due to new developments such as the use of high-k dielectrics for high mobility Ge MOSFETS. However, a systematic local structural investigation of clustering of dopants has been lacking in the literature. In this study, we present a detailed local structural analysis of boron and phosphorus implanted Ge wafers. We have used Ge K-edge x-ray absorption fine-structure spectroscopy (XAFS) in order to probe the local structural modifications around the Ge atom under various implantation parameters and post-implantation annealing treatments. The (100) Ge wafers were implanted and with 11B + or 31P + using energies ranging from 20 keV to 320 keV and doses of 5×10 13 to 5×10 16/cm 2. Pieces of the implanted wafers were subjected to thermal annealing at 400°C or 600°C for three hours in high purity nitrogen. Secondary ion mass spectrometry (SIMS) measurements on these wafers were used to correlate the dopant concentration profiles with the local structural information obtained from XAFS. B and P implanted Ge exhibit distinct responses to annealing. For the P implanted Ge samples annealing leads to recrystallization of Ge with increasing annealing temperature, but also an increase in Ge Debye-Waller factors, whereas B implanted Ge samples exhibit recrystallization at 400°C annealing but more randomness after 600°C annealing.

Original languageEnglish (US)
Article numberE7.8
Pages (from-to)351-356
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume864
StatePublished - Dec 1 2005
Event2005 materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

Fingerprint

Germanium
Boron
Absorption spectroscopy
x ray absorption
Phosphorus
x ray spectroscopy
phosphorus
germanium
absorption spectroscopy
boron
Annealing
X rays
annealing
wafers
Ion implantation
implantation
fine structure
Doping (additives)
Spectroscopy
Semiconductor devices

Cite this

Sahiner, M. Alper ; Ansari, Parviz ; Carroll, Malcolm S. ; King, C. A. ; Suh, Y. S. ; Levy, R. A. ; Buyuklimanli, Temel ; Croft, Mark. / Clustering analysis in boron and phosphorus implanted (100) germanium by x-ray absorption spectroscopy. In: Materials Research Society Symposium Proceedings. 2005 ; Vol. 864. pp. 351-356.
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Clustering analysis in boron and phosphorus implanted (100) germanium by x-ray absorption spectroscopy. / Sahiner, M. Alper; Ansari, Parviz; Carroll, Malcolm S.; King, C. A.; Suh, Y. S.; Levy, R. A.; Buyuklimanli, Temel; Croft, Mark.

In: Materials Research Society Symposium Proceedings, Vol. 864, E7.8, 01.12.2005, p. 351-356.

Research output: Contribution to journalConference article

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T1 - Clustering analysis in boron and phosphorus implanted (100) germanium by x-ray absorption spectroscopy

AU - Sahiner, M. Alper

AU - Ansari, Parviz

AU - Carroll, Malcolm S.

AU - King, C. A.

AU - Suh, Y. S.

AU - Levy, R. A.

AU - Buyuklimanli, Temel

AU - Croft, Mark

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AB - Recently, germanium based semiconductor device technology gained renewed interest due to new developments such as the use of high-k dielectrics for high mobility Ge MOSFETS. However, a systematic local structural investigation of clustering of dopants has been lacking in the literature. In this study, we present a detailed local structural analysis of boron and phosphorus implanted Ge wafers. We have used Ge K-edge x-ray absorption fine-structure spectroscopy (XAFS) in order to probe the local structural modifications around the Ge atom under various implantation parameters and post-implantation annealing treatments. The (100) Ge wafers were implanted and with 11B + or 31P + using energies ranging from 20 keV to 320 keV and doses of 5×10 13 to 5×10 16/cm 2. Pieces of the implanted wafers were subjected to thermal annealing at 400°C or 600°C for three hours in high purity nitrogen. Secondary ion mass spectrometry (SIMS) measurements on these wafers were used to correlate the dopant concentration profiles with the local structural information obtained from XAFS. B and P implanted Ge exhibit distinct responses to annealing. For the P implanted Ge samples annealing leads to recrystallization of Ge with increasing annealing temperature, but also an increase in Ge Debye-Waller factors, whereas B implanted Ge samples exhibit recrystallization at 400°C annealing but more randomness after 600°C annealing.

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