Comparison of microwave ECR and RF plasmas for dry etching of single crystal 6H-SiC

J. R. Flemish, K. Xie, W. Buchwald, L. Casas, J. H. Zhao, G. McLane, M. Dubey

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

Electron cyclotron resonance (ECR) plasma etching of single crystal 6H-SiC has been investigated using a CF4/O2 gas mixture and compared to conventional reactive ion etching (RIE) in a radio frequency (13.56 MHz) reactor. The use of ECR results in higher etch rates, lower levels of bias and smoother etched surfaces than rf-RIE. ECR etch rates exceeding 100 nm/min have been obtained at a substrate bias of -100 V. Etch rate and surface morphology have been studied as a function of pressure, bias and power. Auger electron spectroscopy shows that ECR etching leaves no residues unlike rf-RIE which leaves residues containing Al, F, O and C. The current-voltage and capacitance-voltage measurements of Schottky diodes show that there is far less damage induced by ECR etching compared to rf-RIE.

Original languageEnglish (US)
Pages (from-to)145-150
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume339
DOIs
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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