CONTACT LITHOGRAPHY AT 157 nm WITH AN F2 EXCIMER LASER.

H. G. Craighead, J. C. White, R. E. Howard, L. D. Jackel, R. E. Behringer, J. E. Sweeney, R. W. Epworth

Research output: Contribution to journalConference article

27 Scopus citations

Abstract

The first use of an F//2 excimer laser and a novel mask technology for high resolution photolithography at 157 nm are reported. With a contact lithography technique resist lines as narrow as 0. 15 mu m have been made. Because of the short wavelength involved, conventional mask technology using quartz substrates could not be employed. Alkaline-earth halide substrates (e. g. , CaF//2) that have high transmittance at 157 nm were used as a base for the mask production. Resolution test masks were prepared using e-beam lithography and reactive ion etching to pattern a polyimide film on the substrates. The development of lithographic techniques at this wavelength is significant since the 157 nm radiation is currently the deepest VUV radiation available with high energy flux from a readily obtained commercial laser.

Original languageEnglish (US)
Pages (from-to)1186-1189
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
StatePublished - Jan 1 1983
Externally publishedYes
EventProc of the Int Symp on Electron, Ion and Photon Beams - Los Angeles, CA, USA
Duration: May 31 1983Jun 3 1983

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Craighead, H. G., White, J. C., Howard, R. E., Jackel, L. D., Behringer, R. E., Sweeney, J. E., & Epworth, R. W. (1983). CONTACT LITHOGRAPHY AT 157 nm WITH AN F2 EXCIMER LASER. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1(4), 1186-1189. https://doi.org/10.1116/1.582758