Doping is one of the most fundamental building blocks for semiconductor processing, and enables adaptation to both charge concentration and electrical conductivity. Despite attempts to investigate various doping and de-doping methods for organic semiconductors over many years, their use has been limited to date. Here, we present a method to precisely control the degree of doping in dopant-implanted thiophene-based polymeric conductors. A simple post annealing at a relatively low temperature of approximately 110 °C can significantly diminish the charge carrier concentration with precision, where the controllability is evaluated comprehensively using electron spin resonance and optical absorption techniques. At higher doping regimes, a band-like charge transport with an ideal Hall effect and weak localization is confirmed.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
- Hall effect
- Organic semiconductors