Crystal, electronic structures, optical and magnetic properties of Tb4Al2O9

Y. Q. Li, N. Hirosaki, R. J. Xie, T. Takeda, Samuel Lofland, Kandalam Ramanujachary

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11 Scopus citations


The crystal and electronic structures, optical and magnetic properties of Tb4Al2O9 have been reported. Polycrystalline Tb4Al2O9 was synthesized by a solid state method at 1600 °C for 4 h under N2 atmosphere (0.48 MPa) using AlN as an in situ reducing agent. Tb4Al2O9 is crystallized in the monoclinic crystal system having space group P21/c with a = 0.74831(1) nm, b = 1.05569(1) nm, c = 1.11507(1) nm, β = 108.96(1)0. Tb4Al2O9 was calculated to be a wide band gap semiconductor with indirect band gap energy of about 3.83 eV in fair agreement with the experimental value ∼4.59 eV obtained from the diffuse reflection spectrum. No photoluminescence of Tb3+ could be observed because of large effects of photoionization and concentration quenching of Tb3+ in Tb4Al2O9. Tb4Al2O9 exhibited weak antiferromagnetic interactions with an effective magnetic moment of near that of the Tb3+ free ion.

Original languageEnglish (US)
Pages (from-to)943-948
Number of pages6
JournalJournal of Alloys and Compounds
Issue number1-2
StatePublished - Sep 18 2009

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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