Crystal, electronic structures, optical and magnetic properties of Tb4Al2O9

Y. Q. Li; N. Hirosaki; R. J. Xie; T. Takeda; S. E. Lofland; K. V. Ramanujachary

doi:10.1016/j.jallcom.2009.05.071

Crystal, electronic structures, optical and magnetic properties of Tb₄Al₂O₉

Y. Q. Li
, N. Hirosaki
, R. J. Xie
, T. Takeda
, S. E. Lofland
, K. V. Ramanujachary

Rowan University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The crystal and electronic structures, optical and magnetic properties of Tb₄Al₂O₉ have been reported. Polycrystalline Tb₄Al₂O₉ was synthesized by a solid state method at 1600 °C for 4 h under N₂ atmosphere (0.48 MPa) using AlN as an in situ reducing agent. Tb₄Al₂O₉ is crystallized in the monoclinic crystal system having space group P2₁/c with a = 0.74831(1) nm, b = 1.05569(1) nm, c = 1.11507(1) nm, β = 108.96(1)⁰. Tb₄Al₂O₉ was calculated to be a wide band gap semiconductor with indirect band gap energy of about 3.83 eV in fair agreement with the experimental value ∼4.59 eV obtained from the diffuse reflection spectrum. No photoluminescence of Tb³⁺ could be observed because of large effects of photoionization and concentration quenching of Tb³⁺ in Tb₄Al₂O₉. Tb₄Al₂O₉ exhibited weak antiferromagnetic interactions with an effective magnetic moment of near that of the Tb³⁺ free ion.

Original language	American English
Pages (from-to)	943-948
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	484
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2009.05.071
State	Published - Sep 18 2009

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2009.05.071

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title = "Crystal, electronic structures, optical and magnetic properties of Tb4Al2O9",

abstract = "The crystal and electronic structures, optical and magnetic properties of Tb4Al2O9 have been reported. Polycrystalline Tb4Al2O9 was synthesized by a solid state method at 1600 °C for 4 h under N2 atmosphere (0.48 MPa) using AlN as an in situ reducing agent. Tb4Al2O9 is crystallized in the monoclinic crystal system having space group P21/c with a = 0.74831(1) nm, b = 1.05569(1) nm, c = 1.11507(1) nm, β = 108.96(1)0. Tb4Al2O9 was calculated to be a wide band gap semiconductor with indirect band gap energy of about 3.83 eV in fair agreement with the experimental value ∼4.59 eV obtained from the diffuse reflection spectrum. No photoluminescence of Tb3+ could be observed because of large effects of photoionization and concentration quenching of Tb3+ in Tb4Al2O9. Tb4Al2O9 exhibited weak antiferromagnetic interactions with an effective magnetic moment of near that of the Tb3+ free ion.",

author = "Li, \{Y. Q.\} and N. Hirosaki and Xie, \{R. J.\} and T. Takeda and Lofland, \{S. E.\} and Ramanujachary, \{K. V.\}",

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doi = "10.1016/j.jallcom.2009.05.071",

language = "American English",

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T1 - Crystal, electronic structures, optical and magnetic properties of Tb4Al2O9

AU - Li, Y. Q.

AU - Hirosaki, N.

AU - Xie, R. J.

AU - Takeda, T.

AU - Lofland, S. E.

AU - Ramanujachary, K. V.

PY - 2009/9/18

Y1 - 2009/9/18

N2 - The crystal and electronic structures, optical and magnetic properties of Tb4Al2O9 have been reported. Polycrystalline Tb4Al2O9 was synthesized by a solid state method at 1600 °C for 4 h under N2 atmosphere (0.48 MPa) using AlN as an in situ reducing agent. Tb4Al2O9 is crystallized in the monoclinic crystal system having space group P21/c with a = 0.74831(1) nm, b = 1.05569(1) nm, c = 1.11507(1) nm, β = 108.96(1)0. Tb4Al2O9 was calculated to be a wide band gap semiconductor with indirect band gap energy of about 3.83 eV in fair agreement with the experimental value ∼4.59 eV obtained from the diffuse reflection spectrum. No photoluminescence of Tb3+ could be observed because of large effects of photoionization and concentration quenching of Tb3+ in Tb4Al2O9. Tb4Al2O9 exhibited weak antiferromagnetic interactions with an effective magnetic moment of near that of the Tb3+ free ion.

AB - The crystal and electronic structures, optical and magnetic properties of Tb4Al2O9 have been reported. Polycrystalline Tb4Al2O9 was synthesized by a solid state method at 1600 °C for 4 h under N2 atmosphere (0.48 MPa) using AlN as an in situ reducing agent. Tb4Al2O9 is crystallized in the monoclinic crystal system having space group P21/c with a = 0.74831(1) nm, b = 1.05569(1) nm, c = 1.11507(1) nm, β = 108.96(1)0. Tb4Al2O9 was calculated to be a wide band gap semiconductor with indirect band gap energy of about 3.83 eV in fair agreement with the experimental value ∼4.59 eV obtained from the diffuse reflection spectrum. No photoluminescence of Tb3+ could be observed because of large effects of photoionization and concentration quenching of Tb3+ in Tb4Al2O9. Tb4Al2O9 exhibited weak antiferromagnetic interactions with an effective magnetic moment of near that of the Tb3+ free ion.

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DO - 10.1016/j.jallcom.2009.05.071

M3 - Article

SN - 0925-8388

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JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Crystal, electronic structures, optical and magnetic properties of Tb₄Al₂O₉

Abstract

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