Crystallographic etching of few-layer graphene

Sujit S. Datta; Douglas R. Strachan; Samuel M. Khamis; A. T.Charlie Johnson

doi:10.1021/nl080583r

Crystallographic etching of few-layer graphene

Sujit S. Datta
, Douglas R. Strachan
, Samuel M. Khamis
, A. T.Charlie Johnson

Research output: Contribution to journal › Article › peer-review

460 Scopus citations

Abstract

We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

Original language	English (US)
Pages (from-to)	1912-1915
Number of pages	4
Journal	Nano Letters
Volume	8
Issue number	7
DOIs	https://doi.org/10.1021/nl080583r
State	Published - Jul 2008
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/nl080583r

Cite this

@article{c6015f8e05944e299eea8e710fcf06b9,

title = "Crystallographic etching of few-layer graphene",

abstract = "We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.",

author = "Datta, \{Sujit S.\} and Strachan, \{Douglas R.\} and Khamis, \{Samuel M.\} and Johnson, \{A. T.Charlie\}",

year = "2008",

month = jul,

doi = "10.1021/nl080583r",

language = "English (US)",

volume = "8",

pages = "1912--1915",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Crystallographic etching of few-layer graphene

AU - Datta, Sujit S.

AU - Strachan, Douglas R.

AU - Khamis, Samuel M.

AU - Johnson, A. T.Charlie

PY - 2008/7

Y1 - 2008/7

N2 - We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

AB - We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

UR - https://www.scopus.com/pages/publications/52349104886

UR - https://www.scopus.com/pages/publications/52349104886#tab=citedBy

U2 - 10.1021/nl080583r

DO - 10.1021/nl080583r

M3 - Article

C2 - 18570483

SN - 1530-6984

VL - 8

SP - 1912

EP - 1915

JO - Nano Letters

JF - Nano Letters

IS - 7

ER -

Crystallographic etching of few-layer graphene

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this