Cw infrared laser annealing of ion-implanted silicon

G. K. Celler; J. M. Poate; G. A. Rozgonyi; T. T. Sheng

doi:10.1063/1.325808

Cw infrared laser annealing of ion-implanted silicon

G. K. Celler, J. M. Poate, G. A. Rozgonyi, T. T. Sheng

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Abstract

Solid phase epitaxial regrowth of ion-implanted Si was obtained with cw infrared radiation of CO₂ (10.6 μm) and Nd : YAG lasers. Arsenic-implanted samples were analyzed by optical and electron transmission microscopy and by Rutherford backscattering with channeling. Dislocation-free monocrystalline structures were obtained on substrates which were preheated to 200-400 °C and then scanned with a laser beam of ∼25 W. There was no redistribution of the implanted As and the sample surface was free of any features which might indicate melting. A channeling angular scan showed that the As atoms were located exactly on the lattice sites. However, the relatively high values of sheet resistance suggest the presence of residual point defects.

Original language	American English
Pages (from-to)	7264-7266
Number of pages	3
Journal	Journal of Applied Physics
Volume	50
Issue number	11
DOIs	https://doi.org/10.1063/1.325808
State	Published - 1979
Externally published	Yes

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General Physics and Astronomy

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10.1063/1.325808

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@article{82d3daf9b2b34d45bdb8496c99bb884b,

title = "Cw infrared laser annealing of ion-implanted silicon",

abstract = "Solid phase epitaxial regrowth of ion-implanted Si was obtained with cw infrared radiation of CO2 (10.6 μm) and Nd : YAG lasers. Arsenic-implanted samples were analyzed by optical and electron transmission microscopy and by Rutherford backscattering with channeling. Dislocation-free monocrystalline structures were obtained on substrates which were preheated to 200-400 °C and then scanned with a laser beam of ∼25 W. There was no redistribution of the implanted As and the sample surface was free of any features which might indicate melting. A channeling angular scan showed that the As atoms were located exactly on the lattice sites. However, the relatively high values of sheet resistance suggest the presence of residual point defects.",

author = "Celler, {G. K.} and Poate, {J. M.} and Rozgonyi, {G. A.} and Sheng, {T. T.}",

year = "1979",

doi = "10.1063/1.325808",

language = "American English",

volume = "50",

pages = "7264--7266",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Cw infrared laser annealing of ion-implanted silicon

AU - Celler, G. K.

AU - Poate, J. M.

AU - Rozgonyi, G. A.

AU - Sheng, T. T.

PY - 1979

Y1 - 1979

N2 - Solid phase epitaxial regrowth of ion-implanted Si was obtained with cw infrared radiation of CO2 (10.6 μm) and Nd : YAG lasers. Arsenic-implanted samples were analyzed by optical and electron transmission microscopy and by Rutherford backscattering with channeling. Dislocation-free monocrystalline structures were obtained on substrates which were preheated to 200-400 °C and then scanned with a laser beam of ∼25 W. There was no redistribution of the implanted As and the sample surface was free of any features which might indicate melting. A channeling angular scan showed that the As atoms were located exactly on the lattice sites. However, the relatively high values of sheet resistance suggest the presence of residual point defects.

AB - Solid phase epitaxial regrowth of ion-implanted Si was obtained with cw infrared radiation of CO2 (10.6 μm) and Nd : YAG lasers. Arsenic-implanted samples were analyzed by optical and electron transmission microscopy and by Rutherford backscattering with channeling. Dislocation-free monocrystalline structures were obtained on substrates which were preheated to 200-400 °C and then scanned with a laser beam of ∼25 W. There was no redistribution of the implanted As and the sample surface was free of any features which might indicate melting. A channeling angular scan showed that the As atoms were located exactly on the lattice sites. However, the relatively high values of sheet resistance suggest the presence of residual point defects.

UR - http://www.scopus.com/inward/record.url?scp=36749109105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36749109105&partnerID=8YFLogxK

U2 - 10.1063/1.325808

DO - 10.1063/1.325808

M3 - Article

SN - 0021-8979

VL - 50

SP - 7264

EP - 7266

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Cw infrared laser annealing of ion-implanted silicon

Abstract

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