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Cyclic plasma treatment during ALD Hf
1-x
Zr
x
O
2
deposition
M. N. Bhuyian
,
D. Misra
, K. Tapily
, R. D. Clark
, S. Consiglio
, C. S. Wajd
, G. Nakamur
, G. J. Leusink
Electrical and Computer Engineering
New Jersey Institute of Technology
Research output
:
Contribution to journal
›
Article
›
peer-review
22
Link opens in a new tab
Scopus citations
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1-x
Zr
x
O
2
deposition'. Together they form a unique fingerprint.
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Keyphrases
Plasma Treatment
100%
Atomic Layer Deposition
100%
Antenna
33%
Stress-induced
33%
Plasma Exposure
33%
Downscaling
33%
Field Stress
33%
HfO2
33%
Dielectric Film
33%
Reliability Performance
33%
Weibull
33%
Electron Affinity
33%
Metal-oxide-semiconductor Capacitor (MOSCAP)
33%
Zirconium Dioxide
33%
Constant Electric Field
33%
Depositional Cycle
33%
Voltage Stress
33%
Ar Plasma
33%
Injection Mode
33%
Gate Injection
33%
Breakdown Characteristics
33%
Stress Induced Leakage Current
33%
CexZr1-xO2
33%
Trap Formation
33%
Flat-band Voltage
33%
Oxide Traps
33%
Equivalent Oxide Thickness
33%
Zr Addition
33%
Material Science
Film
100%
Oxide Compound
100%
Metal Oxide
50%
Oxide Semiconductor
50%
Zirconia
50%
Capacitor
50%
Stress Field
50%
Dielectric Films
50%
Engineering
Atomic Layer Deposition
100%
Plasma Treatment
100%
Antenna
33%
Induced Stress
33%
Control Sample
33%
Stress Field
33%
Metal Oxide Semiconductor
33%
Oxide Thickness
33%
Ar Plasma
33%
Stress Induced Leakage Current
33%
Dielectric Films
33%
Earth and Planetary Sciences
Atomic Layer Epitaxy
100%
Downscaling
33%
Metal Oxide Semiconductor
33%
Dielectric Material
33%