The 1050 V, 21.7 mω cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel was demonstrated. With an 11 μm 1 × 1016 cm-3 doped drift layer over 1000 V VJFETs in the normally-off mode were fabricated with a specific on-resistance of 21.7 mω cm2. The experimental results showed that the device performance was limited by the lateral channel mobility.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering