Demonstration of first 1050 V, 21.7 mΩ cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel

Jian Zhao, P. Alexandrov, L. Fursin, M. Weiner

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The 1050 V, 21.7 mω cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel was demonstrated. With an 11 μm 1 × 1016 cm-3 doped drift layer over 1000 V VJFETs in the normally-off mode were fabricated with a specific on-resistance of 21.7 mω cm2. The experimental results showed that the device performance was limited by the lateral channel mobility.

Original languageEnglish (US)
Pages (from-to)151-152
Number of pages2
JournalElectronics Letters
Volume39
Issue number1
DOIs
StatePublished - Jan 9 2003

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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