Demonstration of the first 4H-SiC metal-semiconductor-metal ultraviolet photodetector

Z. Wu, X. Xin, F. Van, J. H. Zhao

Research output: Contribution to journalConference articlepeer-review

15 Scopus citations


This paper demonstrates the first 4H-SiC metal-semiconductor-metal (MSM) UV photodetector. Two types of MSM photodetectors are fabricated for comparison: one in p-type 4H-SiC and the other in n-type 4H-SiC. The n-type SiC photodetectors show a low dark current less than 10nA at -15V bias while the p-type ones show a lower dark current of 0.3nA at -25V. Photo-responsivity is measured from 200nm to 400nm and found to increase linearly with the increase of the bias. A very high peak responsivity of 50A/W is measured for n-type SiC MSM UV photodetector. The responsivity ratio of solar-blind UV to visible is larger than 1000, indicating a good visible-blind performance, immune to any visible and IR background noise, which is better than any Si UV detectors or other types of 4H-SiC UV detectors reported to date.

Original languageEnglish (US)
Pages (from-to)1491-1494
Number of pages4
JournalMaterials Science Forum
Issue numberII
StatePublished - 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


  • MSM
  • SiC
  • UV photodetector


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