InGaPAs/InP heterostructures grown by organometallic vapor phase epitaxy (OMVPE) were systematically examined. The coherency state of the interface was assessed by comparison of normal and parallel lattice parameters and by X-ray topography. Based on these results, the metastable limit of critical thickness was computed. Dependence of X-ray full-width at half maximum (FWHM) on the lattice mismatch and on the tetragonality of the epilayer was observed. These results demonstrate that the coherency state of the hetero-interface is of primary importance in influencing the crystal quality of the InGaPAs active layer.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Materials Science(all)