Effect of graded base doping on the gain of SiC BJT

J. H. Zhao, J. Zhang, X. Li, K. Sheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations
Original languageAmerican English
Title of host publication2005 International Semiconductor Device Research Symposium
Pages398-399
Number of pages2
StatePublished - 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: Dec 7 2005Dec 9 2005

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
Country/TerritoryUnited States
CityBethesda, MD
Period12/7/0512/9/05

ASJC Scopus subject areas

  • General Engineering

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