TY - JOUR
T1 - Effect of interfacial shallow traps on polaron transport at the surface of organic semiconductors
AU - Calhoun, M. F.
AU - Hsieh, C.
AU - Podzorov, V.
PY - 2007/2/28
Y1 - 2007/2/28
N2 - The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap-dominated p-type organic field-effect transistors has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, μ(N), has been measured, which allowed us to estimate the average polaron trapping time, τtr= 50±10ps, and the density of shallow traps, N0=(3±0.5) ×1011cm-2, in the channel of single-crystal tetracene devices.
AB - The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap-dominated p-type organic field-effect transistors has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, μ(N), has been measured, which allowed us to estimate the average polaron trapping time, τtr= 50±10ps, and the density of shallow traps, N0=(3±0.5) ×1011cm-2, in the channel of single-crystal tetracene devices.
UR - http://www.scopus.com/inward/record.url?scp=33847685582&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847685582&partnerID=8YFLogxK
U2 - https://doi.org/10.1103/PhysRevLett.98.096402
DO - https://doi.org/10.1103/PhysRevLett.98.096402
M3 - Article
SN - 0031-9007
VL - 98
JO - Physical review letters
JF - Physical review letters
IS - 9
M1 - 096402
ER -