Effect of screening of piezoelectric phonon fields on absorption-edge broadening in GaAs

George Celler, Ralph Bray

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The broadening of the intrinsic absorption edge by intense, acoustoelectrically amplified phonon flux in piezoelectric semiconductors is well established. A definitive test is presented to show that the piezoelectric fields of the phonons in GaAs are predominantly responsible for this effect. The test consists of using intense extrinsic generation of excess electrons by a Q-switched, Nd-doped yttrium-aluminium-garnet laser to screen out the piezoelectric fields without affecting the acoustic intensity.

Original languageEnglish (US)
Pages (from-to)1422-1425
Number of pages4
JournalPhysical review letters
Volume37
Issue number21
DOIs
StatePublished - Jan 1 1976
Externally publishedYes

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screening
yttrium-aluminum garnet
phonons
acoustics
lasers
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "The broadening of the intrinsic absorption edge by intense, acoustoelectrically amplified phonon flux in piezoelectric semiconductors is well established. A definitive test is presented to show that the piezoelectric fields of the phonons in GaAs are predominantly responsible for this effect. The test consists of using intense extrinsic generation of excess electrons by a Q-switched, Nd-doped yttrium-aluminium-garnet laser to screen out the piezoelectric fields without affecting the acoustic intensity.",
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Effect of screening of piezoelectric phonon fields on absorption-edge broadening in GaAs. / Celler, George; Bray, Ralph.

In: Physical review letters, Vol. 37, No. 21, 01.01.1976, p. 1422-1425.

Research output: Contribution to journalArticle

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AU - Bray, Ralph

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N2 - The broadening of the intrinsic absorption edge by intense, acoustoelectrically amplified phonon flux in piezoelectric semiconductors is well established. A definitive test is presented to show that the piezoelectric fields of the phonons in GaAs are predominantly responsible for this effect. The test consists of using intense extrinsic generation of excess electrons by a Q-switched, Nd-doped yttrium-aluminium-garnet laser to screen out the piezoelectric fields without affecting the acoustic intensity.

AB - The broadening of the intrinsic absorption edge by intense, acoustoelectrically amplified phonon flux in piezoelectric semiconductors is well established. A definitive test is presented to show that the piezoelectric fields of the phonons in GaAs are predominantly responsible for this effect. The test consists of using intense extrinsic generation of excess electrons by a Q-switched, Nd-doped yttrium-aluminium-garnet laser to screen out the piezoelectric fields without affecting the acoustic intensity.

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