Electrical characteristics of ZrO2-based metal-insulator-semiconductor structures on p-Si

T. S. Kalkur, Y. C. Lu

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

The metal-insulator-semiconductor characteristics of annealed ZrO2 films and oxidized zirconium films have been compared. The ZrO2 and zirconium films have been deposited by electron beam evaporation. Scanning electron microscopy analysis reveals a smooth morphology for deposited as well as annealed or oxidized films. The X-ray diffraction analysis shows that the as-deposited films are amorphous and become crystalline as a result of annealing. The static dielectric constant was found to be higher for annealed zirconium oxide films as compared with oxidized zirconium films. The dielectric constant was found to be dependent on annealing temperature.

Original languageEnglish (US)
Pages (from-to)193-196
Number of pages4
JournalThin Solid Films
Volume207
Issue number1-2
DOIs
StatePublished - Jan 30 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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