Abstract
The metal-insulator-semiconductor characteristics of annealed ZrO2 films and oxidized zirconium films have been compared. The ZrO2 and zirconium films have been deposited by electron beam evaporation. Scanning electron microscopy analysis reveals a smooth morphology for deposited as well as annealed or oxidized films. The X-ray diffraction analysis shows that the as-deposited films are amorphous and become crystalline as a result of annealing. The static dielectric constant was found to be higher for annealed zirconium oxide films as compared with oxidized zirconium films. The dielectric constant was found to be dependent on annealing temperature.
Original language | English (US) |
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Pages (from-to) | 193-196 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 207 |
Issue number | 1-2 |
DOIs | |
State | Published - Jan 30 1992 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry