Electrical properties of K-doped superfulleride thin films

Nathan Swami, Mark E. Thompson, Bruce E. Koel

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The electric conductivity of thin films of C60, K-doped superfullerides was measured. The horizontal distance in between the conductivity minimum at 4×10-3 Ωcm corresponding to 380 angstroms K3C60 was applied to assign an average stoichiometry to the KxC60 phases. Based on this assignment, the change in lattice parameter on the formation of the fulleride phases is assumed to be minimal compared to the C60 lattice parameter.

Original languageEnglish (US)
Pages (from-to)3696-3700
Number of pages5
JournalJournal of Applied Physics
Volume85
Issue number7
DOIs
StatePublished - Apr 1 1999

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lattice parameters
electrical properties
fullerides
conductivity
thin films
stoichiometry

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Swami, Nathan ; Thompson, Mark E. ; Koel, Bruce E. / Electrical properties of K-doped superfulleride thin films. In: Journal of Applied Physics. 1999 ; Vol. 85, No. 7. pp. 3696-3700.
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Electrical properties of K-doped superfulleride thin films. / Swami, Nathan; Thompson, Mark E.; Koel, Bruce E.

In: Journal of Applied Physics, Vol. 85, No. 7, 01.04.1999, p. 3696-3700.

Research output: Contribution to journalArticle

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